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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK8A60DA(STA4,Q,M)

    Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A60DA(STA4,Q,M))
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    Avnet Americas TK8A60DA(STA4,Q,M) Tube 50
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    K8A60D Datasheets Context Search

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    k8a60da

    Abstract: K8A60D k8a60 TK8A60DA CHC10
    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    tk8a60dak8a60dak8a60dk8a60+1chc10 PDF

    K8A60DA

    Abstract: TK8A60DA K8A60D k8a60 TK8A60D S12C
    Contextual Info: K8A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K8A60DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.8 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original
    tk8a60dasc-672-10u1b20070701-ja+5k8a60dak8a60dk8a60tk8a60ds12c PDF

    k8a60da

    Abstract: tk8a60da K8A60D TK8A60D k8a60
    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    tk8a60dak8a60dak8a60dtk8a60d+1k8a60 PDF

    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    tk8a60da PDF

    k8a60da

    Abstract: TK8A60DA k8a60
    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    tk8a60dak8a60dak8a60 PDF

    k8a60da

    Contextual Info: K8A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K8A60DA 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.8 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original
    tk8a60dak8a60da PDF