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K80A08K Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TK80A08K3 Contextual Info: K80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K80A08K3 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 200 S • Low leakage current: IDSS = 10 A (max) (VDS = 75 V)	Original	tk80a08k3	PDF
K80A08K3 Abstract: tk80A08K3 2-10U1B MJ1000 K80A08K tr3055 Contextual Info: K80A08K3 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ K80A08K3 スイッチングレギュレーター用単位: mm :RDS (ON) = 3.6 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 200 S (標準)	Original	tk80a08k3 sc-67 2-10u1b k80a08k3 +3mj1000 k80a08k tr3055	PDF
K80A08K3 Abstract: tk80A08K3 DATASHEET K80A08K3 K80A08K Contextual Info: K80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K80A08K3 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 200 S (typ.) •	Original	tk80a08k3 k80a08k3 datasheet k80a08k3 k80a08k	PDF
TK80A08K3 Abstract: K80A08K3 DATASHEET K80A08K3 K80A08K Contextual Info: K80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K80A08K3 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 200 S (typ.) •	Original	tk80a08k3 k80a08k3 datasheet k80a08k3 k80a08k	PDF
K80A08K Abstract: TK80A08K3 K80A08K3 Contextual Info: K80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K80A08K3 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 200 S • Low leakage current: IDSS = 10 A (max) (VDS = 75 V)	Original	tk80a08k3 k80a08k k80a08k3	PDF