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    K7A65 Search Results

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    K7A65 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7A65W-S5X

    MOSFET N-CH 650V 6.8A TO220SIS
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    DigiKey TK7A65W-S5X Tube 48 1
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    Toshiba America Electronic Components TK7A65D(STA4-Q-M)

    MOSFET N-CH 650V 7A TO220SIS
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    DigiKey TK7A65D(STA4-Q-M) Tube 26 1
    • 1 $3.15
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    Toshiba America Electronic Components TK7A65D(STA4,Q,M)

    Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220NIS - Bulk (Alt: 72AK4565)
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    Avnet Americas () TK7A65D(STA4,Q,M) Bulk 1
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    TK7A65D(STA4,Q,M) Tube 16 Weeks 50
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    Mouser Electronics () TK7A65D(STA4,Q,M)
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    TK7A65D(STA4,Q,M)
    • 1 $3.15
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    Newark TK7A65D(STA4,Q,M) Bulk 2,226 1
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    EBV Elektronik TK7A65D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK7A65W,S5X

    - Rail/Tube (Alt: TK7A65W,S5X)
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    Avnet Americas TK7A65W,S5X Tube 16 Weeks 50
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    Mouser Electronics () TK7A65W,S5X 64
    • 1 $2.87
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    TK7A65W,S5X 59
    • 1 $2.87
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    Toshiba America Electronic Components TK7A65W,S5X(M

    MOSFET, N-CH, 650V, 6.8A, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:6.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
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    Newark TK7A65W,S5X(M Bulk 40 1
    • 1 $1.92
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    Rochester Electronics TK7A65W,S5X(M 59,500 1
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    EBV Elektronik TK7A65W,S5X(M 23 Weeks 50
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    K7A65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK7A65D PDF

    Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK7A65D PDF

    K7A65D

    Abstract: TK7A65D on47 k7a65
    Contextual Info: K7A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K7A65D スイッチングレギュレータ用 単位: mm : RDS (ON) =0.8 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		TK7A65D K7A65D TK7A65D on47 k7a65 PDF

    K7A65D

    Abstract: TK7A65D k7a65
    Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK7A65D K7A65D TK7A65D k7a65 PDF

    Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK7A65D PDF

    TK7A65D

    Abstract: K7A65D k7a65 DSASW0038967
    Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK7A65D TK7A65D K7A65D k7a65 DSASW0038967 PDF