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    Toshiba America Electronic Components

    Toshiba America Electronic Components TK6A65D(STA4,Q,M)

    - Rail/Tube (Alt: TK6A65D(STA4,Q,M))
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    Avnet Americas TK6A65D(STA4,Q,M) Tube 16 Weeks 50
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    Mouser Electronics TK6A65D(STA4,Q,M) 341
    • 1 $2.86
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    Newark TK6A65D(STA4,Q,M) Bulk 1
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    TME TK6A65D(STA4,Q,M) 288 1
    • 1 $2.59
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    EBV Elektronik TK6A65D(STA4,Q,M) 23,650 19 Weeks 50
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    Toshiba America Electronic Components TK6A65D(STA4,X,M)

    Mosfet, N-Ch, 650V, 6A, Sc-67; |Toshiba TK6A65D(STA4,X, M)
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    Newark TK6A65D(STA4,X,M) Bulk 1,291 1
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    K6A65D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K6A65D

    Abstract: TK6A65D k6a65 TK6A
    Contextual Info: K6A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		tk6a65dsc-672-10u1bk6a65d+2k6a65tk6a PDF

    K6A65D

    Abstract: tk6a65d tk6a65d equivalent k6a65 K6A65D data TK6A K6A6
    Contextual Info: K6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)


    Original     		tk6a65dk6a65dtk6a65d equivalentk6a65+3k6a65d datatk6ak6a6 PDF

    K6A65D

    Abstract: tk6a65d k6a65
    Contextual Info: K6A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		tk6a65dsc-672-10u1bk6a65d+1k6a65 PDF

    K6A65D

    Abstract: k6a65
    Contextual Info: K6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original     		tk6a65d28mitationk6a65dk6a65 PDF

    K6A65D

    Abstract: k6a65 K6A65D data
    Contextual Info: K6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original     		tk6a65d281ledk6a65dk6a65+1k6a65d data PDF

    K6A65D

    Abstract: k6a65 K6A65D data K6A6 tk6a65d tk6a65d equivalent
    Contextual Info: K6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original     		tk6a65dk6a65dk6a65k6a65d data+2k6a6tk6a65d equivalent PDF