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Toshiba America Electronic Components


Toshiba America Electronic Components TK60D08J1(Q) MOSFET N-CH 75V 60A TO220
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DigiKey	TK60D08J1(Q)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK60D08J1Q SILICON N CHANNEL MOS TYPE (ULTRA-HIGH-SPEED U-MOS) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 60A I(D), 75V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TK60D08J1Q		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K60D08J Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60D08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)	Original	TK60D08J1	PDF
K60D08J Abstract: TK60D08J1 Contextual Info: K60D08J1 東芝電界効果トランジスタシリコンNチャネルMOS形超高速U-MOSⅢ K60D08J1 スイッチングレギュレーター用単位: mm z ゲート入力電荷量が小さい。: Qg=86 nC (標準) z オン抵抗が低い。 : RDS (ON) = 6.2 mΩ (標準)	Original	TK60D08J1 2-10V1A K60D08J TK60D08J1	PDF
TK60D08J1 Contextual Info: K60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60D08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)	Original	TK60D08J1 TK60D08J1	PDF
Contextual Info: K60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60D08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)	Original	TK60D08J1	PDF