K60A08J Search Results

K60A08J

Contextual Info: K60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60A08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)

K60A08J

Abstract: TK60A08J1
Contextual Info: K60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60A08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)

K60A08J

Abstract: TK60A08J1
Contextual Info: K60A08J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K60A08J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。: Qg=86nC (標準) z オン抵抗が低い。 : RDS (ON) = 6.2mΩ (標準)

Contextual Info: K60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60A08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)