K55A10J Search Results

TK55A10J1

Contextual Info: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)

TK55A10J1

Contextual Info: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)

Contextual Info: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 110nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)

TK55A10J1

Contextual Info: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)

TK55A10J1

Abstract: K55A10J TK55A10J
Contextual Info: K55A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K55A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg=110nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 110 S (標準)