Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K4T51163QB Search Results

    K4T51163QB Datasheets (5)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4T51163QB
    Samsung Electronics 512Mb B-die DDR2 SDRAM Original PDF 516.24KB 29
    K4T51163QB-GCCC
    Samsung Electronics Original PDF 516.24KB 29
    K4T51163QB-GCD5
    Samsung Electronics Original PDF 516.24KB 29
    K4T51163QB-ZCCC
    Samsung Electronics Original PDF 516.23KB 29
    K4T51163QB-ZCD5
    Samsung Electronics Original PDF 516.24KB 29
    SF Impression Pixel

    K4T51163QB Price and Stock

    Samsung Semiconductor

    Samsung Semiconductor K4T51163QB-ZCCC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian K4T51163QB-ZCCC 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Samsung Semiconductor K4T51163QB-GCD5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian K4T51163QB-GCD5 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Samsung Semiconductor K4T51163QB-ZCD5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian K4T51163QB-ZCD5 7,250
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Samsung Semiconductor K4T51163QB-GCCC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian K4T51163QB-GCCC 5,650
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    K4T51163QB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M470T6554BZ0-CD5

    Abstract: DDR2 SODIMM SPD JEDEC DDR2-400 DDR2-533
    Contextual Info: SERIAL PRESENCE DETECT M470T6554BZ0-CD5/CCC Organization :64M x 64 Composition :32M x 16 * 8ea Used component part # :K4T51163QB-ZCD5/CC # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms


    Original
    m470t6554bz0-cd5/ccck4t51163qb-zcd5/cc8k/64msddr2-533+4ddr2-400128bytesm470t6554bz0-cd5ddr2 sodimm spd jedec PDF

    M378T3354BZ3-CD5

    Abstract: K4T51163QBZCD5 m378t335 DDR2-400 DDR2-533 DDR2-400C
    Contextual Info: SERIAL PRESENCE DETECT M378T3354BZ3-CD5/CCC Organization :32M x 64 Composition :32M x 16 * 4ea Used component part # :K4T51163QB-ZCD5/CC # of rows in module:1 Row # of banks in component :4 banks Feature :30mm height & single sided component Refresh :8K/64ms


    Original
    m378t3354bz3-cd5/ccck4t51163qb-zcd5/cc8k/64msddr2-533+6ddr2-400128bytesm378t3354bz3-cd5k4t51163qbzcd5m378t335ddr2-400c PDF

    K4T51043QB-GCCC

    Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
    Contextual Info: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original
    512mbk4t51043qb-gccck4t51043qb-gce6k4t51043qb-gle6 PDF

    M378T6553

    Contextual Info: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original
    256mb512mb240pin64/72-bit+4k4t51083qb32mbx1632mx64/x72m378t6553 PDF

    K4T51163QB-ZCCC

    Abstract: k4t51163qb-zcd5
    Contextual Info: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original
    512mbddr2-533ddr2-400k4t51043qb-gcd5+5k4t51043qb-gccck4t51043qb-zcd5k4t51043qb-zccck4t51163qb-zccck4t51163qb-zcd5 PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original
    br-04-all-005br-04-all-004risc-processor s3c2410mr16r1624df0-cm8+8arm9 samsung s3c2440 architecturechip 3351 dvdsp0411nk9w8g08u1msandisk micro sd card 2gbarm9 s3c2440k9f1g08u0ak6x8008c2b PDF

    Contextual Info: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.2 January 2005 Page 1 of 29 Rev. 1.2 Jan. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original
    512mb128mx4k4t51043qb-zcd5k4t51083qb-gcd5+364mx8k4t51083qb-zcd5k4t51163qb-gcd5 PDF

    DDR2 Mechanical Dimensions

    Abstract: 1GB DDR2 4 banks 32MX16 samsung ddr2 240pin 1gb udimm DDR2-533 K4T51163QB M378T3354BG samsung 512mb ddr cl3 dimm 32MBX16
    Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC sINFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original
    256mb512mb240pin64/72-bit+10k4t51163qbddr2 mechanical dimensions1gb ddr2 4 banks32mx16samsung ddr2 240pin 1gbudimmddr2-533m378t3354bgsamsung 512mb ddr cl3 dimm32mbx16 PDF

    BA81-01580A

    Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
    Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st


    Original
    np-x1-c000/serba97-02388aba67-00280aba75-012sub+1544to5ad-6019api1ad0290to2swb-4000dba81-01580aba81-01581apa 66 gf 15venice 6.2ba41-00524amic2568ba81ba59-01318awm3b2200bgba41-00520a PDF

    MMZ1608S121AT

    Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
    Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


    Original
    945gmsba41-00680aba41-00683apag614+16tp18615tp18616tp18617tp18618tp18619tp18620mmz1608s121atnc10 samsung45-d2samsung ddr27sz14ba09-00009aintel945gmssmd y8samsung nc10 biossocket am2 PDF

    DS493

    Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


    Original
    ds493 PDF

    Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.1 June 2004 Rev. 1.1 Jun. 2004 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information


    Original
    256mb512mb200pin64bit+2m470t3354bg32mx64 PDF

    Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    256mb512mb200pin64bit+364mbx8128mx64m470t2953bs PDF

    Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.3 February 2005 Rev. 1.3 Feb. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information


    Original
    256mb512mb200pin64bit+3m470t3354bgm470t3354bz0-ld5/ccm470t6554bg PDF

    SODIMM DDR2

    Abstract: DDR2 SODIMM K4T5108 DDR2-400 DDR2-533 K4T51163QB M470T3354BG0
    Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information


    Original
    256mb512mb200pin64bit+9m470t3354bg0-cd5/cc32mx64sodimm ddr2ddr2 sodimmk4t5108ddr2-400ddr2-533k4t51163qbm470t3354bg0 PDF

    DDR2 SDRAM ECC

    Abstract: 1GB DDR2 4 banks samsung m378 DDR2-667 K4T51163QB DDR2-533C
    Contextual Info: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information


    Original
    256mb512mb240pin64/72-bit+8m378t3354bg0-ce6/d5/cc32mx64ddr2 sdram ecc1gb ddr2 4 bankssamsung m378ddr2-667k4t51163qbddr2-533c PDF

    AES2501

    Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
    Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :


    Original
    controllerp1311tp1312tp1313tp1314+16tp1251tp1252tp1253tp1254tp1255tp1256aes2501ics954305tp960c703 diodetp1332vdd3310tp95033b3 diodedebug32block diagram of intel 8254 chip PDF

    PORON-HH48

    Abstract: BA42-00163A BA42-00133A l565 SMD RA15 4P SOT323 HD3 94V-0 KUBNKM088A AUO b513 E802
    Contextual Info: 10. Electrical Partlist Option SEC Code Main System Name Location BA44-00205A 60W_ADATOR LISHIN ADAPTOR BA46-04730A BIOS HDM-WXPP+F/W-EN G BIOS Spec. LF80539GF0282M,1.66GHz,64Bit,uFCPGA,478P,T R,Plastic,1.05V,31W, 0to+70C,2MB,32Bit M470T3354BG0,32Mx64Bit,SODIMM,200P,67.6x3


    Original
    ba31-00032aba39-00570aba39-00584aba41-00596a+15ba42-00133aba42-00150aba43-00156aba44-00162aba44-00174aba44-00205aporon-hh48ba42-00163al565smd ra154p sot323hd3 94v-0kubnkm088aauo b513e802 PDF

    Contextual Info: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.1 June 2004 Rev. 1.1 Jun. 2004 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information


    Original
    256mb512mb240pin64/72-bit+3m378t3354bgm378t6553bgm378t2953bg PDF

    Contextual Info: 256MB,512MB,1GB Unbuffered DIMMs Preliminary DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 0.6 October 2003 Rev. 0.6 Oct. 2003 256MB,512MB,1GB Unbuffered DIMMs Preliminary DDR2 SDRAM Revision History


    Original
    256mb512mb240pin64/72-bit+1k4t51083qb-gc/l PDF

    k4t51163qb-gcd5

    Abstract: DDR-533
    Contextual Info: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.1 June 2004 Rev. 1.1 Jun. 2004 Page 1 of 26 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original
    512mb128mx4k4t51083qb-gce664mx8+532mx16k4t51163qb-zcd5k4t51163qb-zccck4t51163qb-gcd5ddr-533 PDF

    LA-2481

    Abstract: SIL1362 Llano CPU sld9630tt EDX20 compal TOSHIBA M9 CH7308 Llano C33056
    Contextual Info: A B C D E MODEL NAME : EDX20 PCB NO : LA-2481 1 PVT 1 COMPAL CONFIDENTIAL 2 2 EDX20 Schematics Document 2005-02-22 REV: 0.5 3 3 4 4 Compal Electronics, Inc. Title PROPRIETARY NOTE A B THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL AND


    Original
    edx20la-2481febru7g110zrfds4935a+8sil1362llano cpusld9630ttcompaltoshiba m9ch7308llanoc33056 PDF

    ba41-01882a gbm

    Abstract: ICH7 amt 82801 g SCHEMATIC DIAGRAM c946 001 B34 SAMSUNG ELECTRONICS BA41 MT16 H1 cpu Yonah-2M EMC6N300 TP14995
    Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO PCB thickness: 1mm C


    Original
    945gmba41-00602a/3aba59-01851aa3212elh/hed55xxu12+11100nfba41-01882a gbmich7 amt82801 g schematic diagramc946001 b34samsung electronics ba41mt16 h1cpu yonah-2memc6n300tp14995 PDF

    K4T51163QB-GCCC

    Abstract: K4T51043QB-GCCC K4T51083QB-GCCC DDR2 SDRAM component data sheet DDR2-400 DDR2-533 DDR2-667 K4T51043QB-GCD5 K4T51083QB-GCD5 K4T51163QB-GCD5
    Contextual Info: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.0 January 2004 Rev. 1.0 Jan. 2004 Page 1 of 26 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original
    512mbddr2-667ddr2-533ddr2-400+8128mx4k4t51043qb-gcd5k4t51043qb-gccck4t51163qb-gccck4t51083qb-gcccddr2 sdram component data sheetk4t51083qb-gcd5k4t51163qb-gcd5 PDF