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    K4F660812E Search Results

    K4F660812E Datasheets (6)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4F660812E
    		Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF 171.69KB 20
    K4F660812E
    		Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF 174.44KB 20
    K4F660812E-JC/L
    		Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF 171.69KB 20
    K4F660812E-JI/P
    		Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF 174.45KB 20
    K4F660812E-TC/L
    		Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF 171.69KB 20
    K4F660812E-TI/P
    		Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF 174.45KB 20

    K4F660812E Datasheets Context Search

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    K4F640812E

    Abstract: K4F660812E
    Contextual Info: K4F660812E,K4F640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) ar e


    Original     		K4F660812E K4F640812E 400mil K4F640812E PDF

    K4F640812E

    Abstract: K4F660812E
    Contextual Info: Industrial Temperature K4F660812E,K4F640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) ar e


    Original     		K4F660812E K4F640812E 400mil K4F640812E PDF