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    K4F660412E Search Results

    K4F660412E Datasheets (2)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4F660412E
    		Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF 171.67KB 20
    K4F660412E
    		Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF 174.31KB 20

    K4F660412E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4F640412E

    Abstract: K4F660412E
    Contextual Info: Industrial Temperature K4F660412E,K4F640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)


    Original     		K4F660412E K4F640412E 16Mx4 400mil K4F640412E PDF

    K4F640412E

    Abstract: K4F660412E
    Contextual Info: K4F660412E,K4F640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)


    Original     		K4F660412E K4F640412E 16Mx4 400mil K4F640412E PDF