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    K4F641612E Datasheets (4)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4F641612E
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF 382.77KB 35
    K4F641612E
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF 386.3KB 35
    K4F641612E-TC/L
    		Samsung Electronics DRAM Module, 4Mx16 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF 382.77KB 35
    K4F641612E-TI/P
    		Samsung Electronics DRAM Module, 4Mx16 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF 386.3KB 35
    SF Impression Pixel

    K4F641612E Price and Stock

    Samsung Semiconductor & Electro-Mechanics

    Samsung Semiconductor & Electro-Mechanics K4F641612E-TC50

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    Bristol Electronics K4F641612E-TC50 288
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    K4F641612E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4F641612E

    Abstract: K4F661612E
    Contextual Info: K4F661612E, K4F641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)


    Original     		k4f661612ek4f641612e16bit4mx16+1400mil PDF

    K4F641612E

    Abstract: K4F661612E
    Contextual Info: Industrial Temperature K4F661612E, K4F641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)


    Original     		k4f661612ek4f641612e16bit4mx16+1400mil PDF