K4E170412D Search Results

K4E160411D

Abstract: K4E160411D-B K4E160412D K4E160412D-B K4E170411D K4E170411D-B K4E170412D K4E170412D-B 304X4
Contextual Info: K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K

K4E641612D-T

Contextual Info: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs

Contextual Info: DRAM MODULE M374F0805DT1-C Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M374F0805DT1-C DRAM MODULE M374F0805DT1-C

Contextual Info: M372F0400DB0/DF0 M372F0410DB0/DF0 DRAM MODULE M372F0400DB0/DF0 / M372F0410DB0/DF0 with EDO Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F040 1 0D is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372F040(1)0D

Contextual Info: DRAM MODULE M372F0405DT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th.(4th.) generation of 64M(16M) components are applied to this module. M372F0405DT0-C DRAM MODULE M372F0405DT0-C

Contextual Info: DRAM MODULE M372F0405DT0-C M372F0405DT0-C EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372F0405DT0-C consists of four 4Mx16bits & two 4Mx4bits

Contextual Info: M372F0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372F0805DT0-C M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode

K4E641612D-T

Contextual Info: M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0805DT0-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung M372F0805DT0-C consists of eight

Contextual Info: DRAM MODULE M374F0405DT1-C Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64Mb DRAM components are applied to this module. M374F0405DT1-C DRAM MODULE M374F0405DT1-C

Contextual Info: Preliminary M372F0400DW0/DZ0 M372F0410DW0/DZ0 DRAM MODULE M372F0400DW Z 0 / M372F0410DW(Z)0 EDO Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F040(1)0D is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372F040(1)0D