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Toshiba America Electronic Components


Toshiba America Electronic Components TK4A65DA(STA4,Q,M) MOSFET N-CH 650V 3.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A65DA(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	TK4A65DA(STA4,Q,M)	Tube			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	TK4A65DA(STA4,Q,M)					1 $2.35 10 $1.50 100 $1.03 1000 $0.73 10000 $0.64	Get Quote

K4A65DA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TK4A65DA Abstract: K4A65DA C4008 Contextual Info: K4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.9 S (typ.) Low leakage current: IDSS = 10 A(max) (VDS = 650 V)	Original	TK4A65DA TK4A65DA K4A65DA C4008	PDF
Contextual Info: K4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: \|Yfs\| = 1.9 S (typ.) Low leakage current: IDSS = 10 A(max) (VDS = 650 V)	Original	TK4A65DA	PDF
Contextual Info: K4A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.9 S (typ.) Low leakage current: IDSS = 10 A(max) (VDS = 650 V)	Original	TK4A65DA	PDF
K4A65DA Abstract: TK4A65DA Contextual Info: K4A65DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K4A65DA ○ スイッチングレギュレータ用単位: mm z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.9 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 650V)	Original	TK4A65DA K4A65DA TK4A65DA	PDF