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    K3A65DA Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK3A65DA(STA4,QM)

    MOSFET N-CH 650V 2.5A TO220SIS
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    DigiKey TK3A65DA(STA4,QM) Tube 1
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    Avnet Americas TK3A65DA(STA4,QM) Tube 16 Weeks 50
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    Mouser Electronics TK3A65DA(STA4,QM) 240
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    Rochester Electronics TK3A65DA(STA4,QM) 10,000 1
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    K3A65DA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TK3A65DA

    Contextual Info: K3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K3A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK3A65DA TK3A65DA PDF

    K3A65d

    Abstract: K3A65DA K3A65 TK3A65DA 804TC
    Contextual Info: K3A65DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K3A65DA スイッチングレギュレータ用 単位: mm 2.7 ± 0.2 10 ± 0.3 A : |Yfs| = 2.2 S (標準) (VDS = 650 V) 取り扱いが簡単なエンハンスメントタイプです。


    Original     		TK3A65DA K3A65d K3A65DA K3A65 TK3A65DA 804TC PDF

    K3A65DA

    Abstract: K3A65d TK3A65DA k3a65 650VVGS
    Contextual Info: K3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K3A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.3 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK3A65DA K3A65DA K3A65d TK3A65DA k3a65 650VVGS PDF

    k3a65

    Contextual Info: K3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K3A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.3 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)


    Original     		TK3A65DA k3a65 PDF