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Vishay Intertechnologies CRCW0603365KFKEA Thick Film Resistors - SMD 1/8 Watt 365Kohms 1%
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TTI	CRCW0603365KFKEA	Reel	35,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Harwin S25-546 Contact Probes EZ Boardware S25 CRIMP SLEEVE
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TTI	S25-546	Bulk			1,000	1 - 10 - 100 - 1000 $0.83 10000 $0.83	Buy Now
Vishay Intertechnologies WFCP0508R0120FE66 Current Sense Resistors - SMD .012ohms 1% .5w
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TTI	WFCP0508R0120FE66	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Corporation 86553117TLF D-Sub Tools & Hardware 50 POS METAL CAP
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TTI	86553117TLF	Tray			500	1 - 10 - 100 - 1000 $0.92 10000 $0.92	Buy Now
Toshiba America Electronic Components 2SK3879-TE24LQ Trans MOSFET N-CH Si 800V 6.5A 3-Pin(2+Tab) TO-220SM T/R
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Bristol Electronics	2SK3879-TE24LQ		7,813		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.29 10000 $0.29	Buy Now

K3879 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LPC47N354 Abstract: K3879 FDS49358 C1870 88SA8040 T43 88SA8040 ic c1891 quanta quanta computer bm10 Contextual Info: 1 2 3 4 5 6 7 PWA: K3879, SCHEM: J3957 VER : 2A AZEDA-DISCRETE GFX A 8 JM5 M/B PCB RUN POWER SW PG 48 A AC/BATT CONNECTOR PG 50 BATT SELECTOR PG 43 BATT CHARGER PG 44 Dothan/Yonah DC/DC +3V_SRC +5VSUS CPU VR PG 47 PG 45 478 Micro-FCPGA PG 16 PG 42 PG 4,5	Original	k3879 j3957 4x133mhz pciex16 +15da204u bss138 fds6679 blm11b102s cm1922 vz0603m260apt lpc47n354 fds49358 c1870 88sa8040 t43 88sa8040 ic c1891 quanta quanta computer bm10	PDF
Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)	Original	2sk3879	PDF
k3879 Abstract: 65a3 2SK3879 Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)	Original	2sk3879 k3879 65a3	PDF
K3879 Abstract: 2SK3879 Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2sk3879 k3879	PDF
2SK3879 Abstract: K3879 2SK38 k387 Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2sk3879 k3879 2sk38 k387	PDF
2SK3879 Abstract: K3879 Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2sk3879 k3879	PDF