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    K3879 Search Results

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    YAGEO Corporation RC1206JR-072K4L

    Thick Film Resistors - SMD General Purpose Chip Resistor 1206, 2.4kOhms, 5%, 1/4W
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    TTI RC1206JR-072K4L Reel 45,000 5,000
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    Vishay Intertechnologies CRCW0603365KFKEA

    Thick Film Resistors - SMD 1/8 Watt 365Kohms 1%
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    TTI CRCW0603365KFKEA Reel 10,000 5,000
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    Vishay Intertechnologies WFCP0508R0120FE66

    Current Sense Resistors - SMD .012ohms 1% .5w
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    TTI WFCP0508R0120FE66 Reel 5,000
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    Harwin S25-546

    Contact Probes EZ Boardware S25 CRIMP SLEEVE
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    TTI S25-546 Bulk 1,000
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    Amphenol Corporation 86553117TLF

    D-Sub Tools & Hardware 50 POS METAL CAP
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    TTI 86553117TLF Tray 500
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    K3879 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LPC47N354

    Abstract: K3879 FDS49358 C1870 88SA8040 T43 88SA8040 ic c1891 quanta quanta computer bm10
    Contextual Info: 1 2 3 4 5 6 7 PWA: K3879, SCHEM: J3957 VER : 2A AZEDA-DISCRETE GFX A 8 JM5 M/B PCB RUN POWER SW PG 48 A AC/BATT CONNECTOR PG 50 BATT SELECTOR PG 43 BATT CHARGER PG 44 Dothan/Yonah DC/DC +3V_SRC +5VSUS CPU VR PG 47 PG 45 478 Micro-FCPGA PG 16 PG 42 PG 4,5


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    K3879, J3957 4X133MHZ PCIEx16 DA204U BSS138 FDS6679 BLM11B102S CM1922 VZ0603M260APT LPC47N354 K3879 FDS49358 C1870 88SA8040 T43 88SA8040 ic c1891 quanta quanta computer bm10 PDF

    Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


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    2SK3879 PDF

    k3879

    Abstract: 65a3 2SK3879
    Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original
    2SK3879 k3879 65a3 2SK3879 PDF

    K3879

    Abstract: 2SK3879
    Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2SK3879 K3879 2SK3879 PDF

    2SK3879

    Abstract: K3879 2SK38 k387
    Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2SK3879 2SK3879 K3879 2SK38 k387 PDF

    2SK3879

    Abstract: K3879
    Contextual Info: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2SK3879 2SK3879 K3879 PDF