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    K3566 DATA Search Results

    K3566 DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D
    		Murata Manufacturing Co Ltd Data Line Filter, PDF
    54HC152J/B
    		Rochester Electronics LLC 54HC152 - 8 to 1 Line Data Selectors/Multiplexers PDF Buy
    54LS298/BEA
    		Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    		Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    54F257/BEA
    		Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) PDF Buy

    K3566 DATA Datasheets Context Search

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    K3566 transistor

    Abstract: K3566 2SK3566 transistor k3566 K3566 data k356
    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3566 K3566 transistor K3566 2SK3566 transistor k3566 K3566 data k356 PDF

    K3566 transistor

    Abstract: K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566
    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3566 K3566 transistor K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566 PDF

    K3566

    Abstract: K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566
    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566 PDF

    K3566 transistor

    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 transistor PDF

    K3566

    Abstract: K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent
    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent PDF

    2SK3566

    Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3566 2SK3566 PDF