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Festo OK-3/4 (531775) SEAL RING, FOR SCREW IN THREADED PINS, ISO 16030
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	OK-3/4 (531775)	Bulk	43		1	1 $1.77 10 $1.77 100 $1.77 1000 $1.77 10000 $1.77	Buy Now
Vishay Intertechnologies CRCW040228R7FKED Thick Film Resistors - SMD 1/16watt 28.7ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW040228R7FKED	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now

K3453 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3453 Contextual Info: K3453 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSIV K3453 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.72 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: \|Yfs\| = 7.0 S (標準)	Original	2SK3453 2-16F1B 2SK3453	PDF
2SK3453 Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) · High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)	Original	2SK3453 2SK3453	PDF
NC marking transistor Abstract: 2SK3453 K3453 Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)	Original	2SK3453 NC marking transistor 2SK3453 K3453	PDF
2SK3453 Abstract: K3453 Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)	Original	2SK3453 2SK3453 K3453	PDF
2SK3453 Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)	Original	2SK3453 2SK3453	PDF
K3453 Abstract: 2SK345 Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)	Original	2SK3453 K3453 2SK345	PDF
Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)	Original	2SK3453	PDF
K3453 Contextual Info: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)	Original	2SK3453 K3453	PDF