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    Toshiba America Electronic Components TK2P60D(TE16L1,NV)

    MOSFET N-CH 600V 2A PW-MOLD
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    DigiKey TK2P60D(TE16L1,NV) Reel
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    Avnet Americas TK2P60D(TE16L1,NV) Reel 32 Weeks 2,000
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    Avnet Asia TK2P60D(TE16L1,NV) 24 Weeks 2,000
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    EBV Elektronik TK2P60D(TE16L1,NV) 504,000 19 Weeks 2,000
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    New Advantage Corporation TK2P60D(TE16L1,NV) 404,000 1
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    Toshiba America Electronic Components TK2P60D(TE16L1,NQ)

    MOSFET N-CH 600V 2A PW-MOLD
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    DigiKey TK2P60D(TE16L1,NQ) Reel
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    Toshiba Corporation TK2P60D(TE16L1,NQ)

    MOSFET Devices; TOSHIBA; TK2P60D(TE16L1, NQ); 600 V; 2 A; 30 V; 60 W
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    Maritex TK2P60D(TE16L1,NQ) 120,000 1
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    K2P60D Datasheets Context Search

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    TK2P60D

    Abstract: K2P60D
    Contextual Info: K2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS


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    TK2P60D TK2P60D K2P60D PDF

    Contextual Info: K2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K2P60D Switching Regulator Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.5 ± 0.2 0.6 MAX. 9.5 ± 0.3 5.2 ± 0.2 (typ.) Low drain-source ON-resistance: RDS (ON) = 3.3 High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.)


    Original
    TK2P60D PDF

    K2P60D

    Abstract: TK2P60D
    Contextual Info: K2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V


    Original
    TK2P60D K2P60D TK2P60D PDF

    K2P60D

    Abstract: TK2P60D
    Contextual Info: K2P60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K2P60D ○ スイッチングレギュレータ用 単位: mm 5.2 ± 0.2 : Vth = 2.4~4.4 V (VDS = 10 V, ID = 1 mA) 9.5 ± 0.3 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.0 S (標準)


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    TK2P60D K2P60D TK2P60D PDF