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K1S2816BCM Datasheets (2)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K1S2816BCM		Samsung Electronics	8Mx16 bit Page Mode Uni-Transistor Random Access Memory	Original	PDF	136.81KB	10
K1S2816BCM-I		Samsung Electronics	8Mx16 bit Page Mode Uni-Transistor Random Access Memory	Original	PDF	136.82KB	10

K1S2816BCM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K1S2816BCM Abstract: K1S2816BCM-I Contextual Info: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter	Original	K1S2816BCM 8Mx16 K1S2816BCM K1S2816BCM-I	PDF

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K1S2816BCM

Abstract: K1S2816BCM-I
Contextual Info: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter

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K1S2816BCM 8Mx16 K1S2816BCM K1S2816BCM-I

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