K18 DIODES Search Results

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78

BZA100

Abstract: SMD Diode KE 18-fold MBG393 MS-013AC S020 smd k7 diode
Contextual Info: Philips Semiconductors Product specification 18-fold ESD transient voltage suppressor BZA100 FEATURES DESCRIPTION • S 0 2 0 SMD package allows 18 separate voltage regulator diodes in a common anode configuration 18-fold monolitic transient voltage suppressor. Its 18-fold junction

Contextual Info: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,

Contextual Info: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能叙述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,

Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

BL301

Abstract: K558 Y460 ZNBT-60-1W
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

1gw 82

Abstract: PBTC-1GW BL301 K558 Y460 ZNBT-60-1W
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-f U ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

Contextual Info: BIAS-TEES HIGH CURRENT 50Ω Surface Mount o 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU ISOLATION*, dB CAPD DATA CASE STYLE RF-DC, RF&DC-DC (see RF/IF Designer handbook) Page Note B C O N N E C T I O N INSERTION LOSS*, dB FREQ. RANGE MHz L M U L M U Typ. Max.

BL301

Abstract: K558 Y460 ZNBT-60-1W DSA0036977
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

1gw 75

Abstract: JEBT-6G
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

Contextual Info: BIAS-TEES 50Ω Surface Mount o HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU CAPD DATA ISOLATION*, dB INSERTION LOSS*, dB FREQ. RANGE MHz Note B C O N N E C T I O N BL301 BL301 hr hr 39.95 59.95 BL301 BL301 hr hr 59.95 69.95 CASE STYLE RF-DC, RF&DC-DC

1gw 75

Abstract: HF 4093 N
Contextual Info: Bias-Tee □ Mini-Circuits ZFBT ZFBT-FT 0.1 to 6000 MHz case style selection outline drawings see Table of Contents PBTC FREQ. MHz L MODEL NO. ZFBT-4R2G ZFBT-4R2G-FT ZFBT-6G ZFBT-6G-FT •fr ZFBT-4R2GW <• ZFBT-4R2GW-FT ■fr ZFBT-6GW 4- ZFBT-6GW-FT PBTC-1G

RFDC

Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G Note B C O N N E C T I O N — — — — — — BL301 BL301 hr hr 39.95 59.95 1.05 1.2 1.1 1.3 1.1 1.2 1.2 2.2 GU1041 GU1041

GU1041

Abstract: 1gW 38
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.

R142.016.000 W

Contextual Info: B ias-T ees 50Q Surface Mount12 High Curren t TOO kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz ISOLATION* „ • (dB) (RF-bC, RF&DC-DC) INSERTION LOSS* (dB) M U Typ. M ax. Typ. M ax. Typ. Max. 0.6 0.7 1.2 1.4 0.6 1.3 0.6 0.7 1.2 1.4 0.6 1.3 JEBT-4R2G

K18 diodes

Abstract: TB268
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.

Contextual Info: BIAS-TEES Surface Mount o 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW 10-4200 0.1-4200 NEW TCBT-2R5G NEW TCBT-6G 20-2500 50-6000 Note B C O N N E C T I O N 1.2 1.2 0.6 0.6 1.6 1.6 32 25 20 15 40 40 20 20 40 40 20 20 — — —

LC 7995

Contextual Info: Bias-Tees 50 Q Surface MountJ High Current 100 kHz to6000 MHz JEBT INSERTION LOSS*, dB FREQ. RANGE MHz MODEL NO. H CASE STYLE ISOLATION*, C» RF-DC, RF&DC-DC L M u L M u Typ. Max. Typ. Max. Typ. M ax. iy p . Min. Typ. Min. Typ . Min. Note B JEBT-4R2G JEBT-6G

20257

Abstract: 203CNQ100
Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r PM Nuntfaor II Schottky Diodes 7 >F(AV)0Tc VfM*IFM A * (Veto) » te mJ (3) (7)tan fatodVmm Ur mA (Amp») Fw-on- •GW Mu l Tj •c Notes Dnnand Numbtr Cue Style, (Cm OuAm) (1) M od ul« « Center Tap 200CNQ035

PWR-8232X

Contextual Info: I L C DATA DEVICE CORP IDE D | 4^,7071^ □□QbDbS h D I PWR-82324 SERIES C ILC DATA DEVICE CORPORATION_ HIGH CURRENT H-BRIDGE WITH FLYBACK DIODES » - a s - 0 7 FEATURES •SMALL SIZE • HIGH CURRENT CAPABILITY DESCRIPTION The PWR-82324 Series are H-bridge

smd 58a transistor 6-pin

Abstract: ISL75051SRH
Contextual Info: 3A, Rad Hard, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input voltage range of 2.2V to 6.0V and are capable of providing

ISL75051SEHVFE

Abstract: smd 58a transistor 6-pin ldr 3 pin metal package
Contextual Info: 3A, Radiation Hardened, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input

ISL75051SEHVFE

Abstract: ISL75051SEHVF 5962R1121202V9A
Contextual Info: 3A, Rad Hard, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input voltage range of 2.2V to 6.0V and are capable of providing

5962R11212

Contextual Info: DATASHEET 3A, Radiation Hardened, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input