K17 DIODE Search Results

TSI180B1

Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 ST Microelectronics SO8 Marking information ST Microelectronics SO8 Marking TSIxxB1
Contextual Info: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :

BRS212-280

Abstract: BRS212-220 BR211 BRS212 BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-240 BRS212-260
Contextual Info: Philips Semiconductors Product specification Breakover diodes BRS212 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover

TP10N

Contextual Info: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and

Contextual Info: 25E J> • bb 53 1 3 1 0 0 2 2 2 ^ 5 3 ■ DEVELOPMENT DATA BR213 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. J K N AMER PH ILI PS /D IS CR ET E T ^2S ^< D S - DUAL BREAKOVER DIODES A range of monolithic dual bidirectional breakover diodes w ith ±12% tolerance of breakover voltage.

BR211 equivalent

Contextual Info: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover

BR211

Abstract: BR211SM BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280
Contextual Info: Philips Semiconductors Preliminary specification Breakover diodes GENERAL DESCRIPTION BR211SM series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover

BR211-220

Abstract: BR211 equivalent RT-HE BR211 BR211-140 BR211-160 BR211-180 BR211-200 BR211-240 BR211-260
Contextual Info: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78

SM2F

Abstract: M2480 BR216
Contextual Info: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.

6004 0215

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 60 AMP BUTTON DIODES Mechanical Specification Features Void Free Vacuum Die Soldering For Maximum Mechanical Strength and Heat Dissipation

Contextual Info: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

Contextual Info: 2SE D • ^53=133. 00 22 2 4 3 4 N AflER PHILIPS/DISCRETE B R 210 SER IES T-2S-O S' 7 V BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + /— 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

Contextual Info: SSE D • bh53T31 002S2fll 1 ■ I N AMER PH IL IPS /DISCR ETE J BR220 SERIES V 1 ^ -2 S '- o s ' DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a +/— 12% tolerance series o f nominal breakover voltage.

DIODE T25 4 Jo

Abstract: DIODE T25 4 bo DIODE T25-4-bo
Contextual Info: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

BR220-100

Abstract: BR220
Contextual Info: 5bE J> 711002b DOmOfib DTG • PHIN BR220 SERIES T-/I-23 °HILIPS INTERNAT IO NAL SbE D rpf»N DUAL BREAKOVER DIODES The BR220 is a range o f m on olithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the T 0 -22 0A B outline, available in a + /— 12% tolerance series o f nom inal breakover voltage.

Contextual Info: N A PIER PHILIPS/DISCRETE OLE D 1,^53=131 DQ110E3 1 BR220 SERIES r - 3 5 " - OS- DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a + /— 12% tolerance series of nominal breakover voltage.

HSP1072F3

Abstract: dual Symmetrical Transient Voltage Suppressors
Contextual Info: HSP1072F3, HSP1Q82F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rtjftt0 1997. Powgr Innovation» Limited. UK SEPTEMBER 1993 - REVISED SEPTEMBER 1987 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • ton-4mptonted Breakdown Region D PACKAQE TOP View

Contextual Info: I L C DATA DEVICE CORP IDE D | Mb7û7bT QDDbObO 2 D D I PWR-82320 SERIES ILC DATA DEVICE CORPORATION_ HIGH CURRENT H-BRIDGE WITH FLYBACK DIODES T ^2 3 -cn FEATURES • SMALL SIZE • HIGH CURRENT CAPABILITY DESCRIPTION The PWR-82320 Series are H-bridge Power Hybrids featuring up to 30A output

4040N

Contextual Info: ERICSSON ^ April 1997 PBR510 12/1 LPC Line Resistor Network Description Key Features The Line Protection Resistor Network LPC PBR 510 12/1 consists of a ratio matched pair of thickfilm resistors on a ceram ic substrate. PBR 510 12/1 is used in telephone line interface overvoltage protection networks, where the LPC resistors

thyristor BT 200

Contextual Info: ERICSSON $ April 1997 PBR 5111/6 LPC Line Resistor Network Description Key Features The Line Protection Resistor Network LPC PBR 5111/6 consists of a ratio matched pair of thickfilm resistors on a ceramic substrate. PBR 5111/6 is used in telephone line interface overvoltage protection networks, where the LPC resistors limit the

K2049

Abstract: EA2x
Contextual Info: ERICSSON 5 August 1998 PBR 520 03/1 LPM Line Protection Module Description The Line Protection Module LPM PBR 520 03/1 consists of a ratio matched line resistor pair including thermistors (PTC's) on a ceramic substrate. PBR 520 03/1 is used in telephone line interface overvoltage protection networks, where the LPM

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: ERICSSON ^ April 1997 PBR 5110/1 LPC Line Resistor Network Description The Line Protection Resistor Network LPC PBR 5110/1 consists of a ratio matched pair of thickfilm resistors on a ceramic substrate. PBR 5110/1 is used in telephone line interface overvoltage protection networks, where the LPC resistors limit the

PE-60

Abstract: TISP1072F3 TISP1082F3 MD1X
Contextual Info: TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SEPTEMBER 1993 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge D PACKAGE