K1381 Search Results

K1381 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K1381		Toshiba	Field Effect Transistor Silicon N Channel MOS Type (L2-pai-MOSIII) Relay Drive, Motor Drive and DC-DC Converter	Original	PDF	450.12KB	6

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Fischer Elektronik GmbH & Co KG SK-138-1000-ME Extruded Heatsink for PCB mounti
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SK-138-1000-ME	Bulk			1	1 $41.79 10 $41.79 100 $41.79 1000 $41.79 10000 $41.79	Buy Now
Fischer Elektronik GmbH & Co KG SK-138-1000-AL Extruded Heatsink for PCB mounti
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SK-138-1000-AL	Bulk			1	1 $34.07 10 $34.07 100 $34.07 1000 $34.07 10000 $34.07	Buy Now
Fischer Elektronik GmbH & Co KG SK-138-1000-SA Extruded Heatsink for PCB mounti
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SK-138-1000-SA	Bulk			1	1 $41.79 10 $41.79 100 $41.79 1000 $41.79 10000 $41.79	Buy Now
Sensata Circuit Breakers LELK1-38159-1-V CIR BRKR,HYDMAG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LELK1-38159-1-V	Bulk			3	1 - 10 $67.70 100 $67.70 1000 $67.70 10000 $67.70	Buy Now
Master Electronics	LELK1-38159-1-V					1 - 10 $61.32 100 $32.77 1000 $32.77 10000 $32.77	Buy Now
Sager	LELK1-38159-1-V				1	1 $73.58 10 $73.58 100 $39.18 1000 $25.65 10000 $23.72	Buy Now
Sensata Circuit Breakers IELK1-38136-25-V CIR BRKR,HYDMAG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IELK1-38136-25-V	Bulk			3	1 - 10 $57.47 100 $57.47 1000 $57.47 10000 $57.47	Buy Now
Master Electronics	IELK1-38136-25-V					1 - 10 $52.83 100 $28.22 1000 $20.44 10000 $20.44	Buy Now
Sager	IELK1-38136-25-V				1	1 $62.44 10 $62.44 100 $38.24 1000 $21.74 10000 $20.14	Buy Now

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K1381 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance	Original	2SK1381	PDF
Contextual Info: K1381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance	Original	2SK1381	PDF
K1381 Abstract: 2SK1381 Contextual Info: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance	Original	2SK1381 K1381 2SK1381	PDF
2SK1381 Abstract: K1381 Contextual Info: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance	Original	2SK1381 2SK1381 K1381	PDF
K1381 Abstract: 2SK1381 Contextual Info: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance	Original	2SK1381 15transportation K1381 2SK1381	PDF
K1381 Abstract: 2SK1381 Contextual Info: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance	Original	2SK1381 K1381 2SK1381	PDF