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K12J55D Abstract: SC-65 tk12j55 Contextual Info: K12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12J55D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage	Original	TK12J55D K12J55D SC-65 tk12j55	PDF
Contextual Info: K12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12J55D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 550 V Gate-source voltage	Original	TK12J55D	PDF
K12J55D Abstract: TK12J55D Contextual Info: K12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12J55D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 550 V Gate-source voltage	Original	TK12J55D K12J55D TK12J55D	PDF
TK12J55D Abstract: K12J55D SC-65 Contextual Info: K12J55D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K12J55D ○ スイッチングレギュレータ用単位: mm : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 絶対最大定格 (Ta = 25℃) ＋0.3 1.0 －0.25 VDSS 550	Original	TK12J55D TK12J55D K12J55D SC-65	PDF
Contextual Info: K12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12J55D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V ID 12 DC (Note 1) Drain current IDP 48 PD	Original	TK12J55D	PDF