K12A55D Search Results
K12A55D Price and Stock
Toshiba America Electronic Components TK12A55D(STA4,Q,M)MOSFET N-CH 550V 12A TO220SIS |
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TK12A55D(STA4,Q,M) | Tube | 1 |
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TK12A55D(STA4,Q,M) | Tube | 16 Weeks | 50 |
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K12A55D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) |
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TK12A55D | |
Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) |
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TK12A55D | |
K12A55DContextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) |
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TK12A55D K12A55D | |
Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 550 V) |
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TK12A55D | |
K12A55DContextual Info: K12A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K12A55D ○ スイッチングレギュレータ用 : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 |
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TK12A55D K12A55D |