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    K12A45D Search Results

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    K12A45D Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK12A45D(STA4-Q-M)

    MOSFET N-CH 450V 12A TO220SIS
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    DigiKey TK12A45D(STA4-Q-M) Tube 1
    • 1 $3.17
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    Toshiba America Electronic Components TK12A45D(STA4,Q,M)

    - Rail/Tube (Alt: TK12A45D(STA4,Q,M))
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    Avnet Americas TK12A45D(STA4,Q,M) Tube 16 Weeks 50
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    K12A45D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


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    TK12A45D PDF

    Contextual Info: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.43 High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original
    TK12A45D PDF

    K12A45D

    Abstract: TK12A45D
    Contextual Info: K12A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A45D ○ スイッチングレギュレータ用 : Vth = 2.0~4.0 V (VDS = 10 VID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original
    TK12A45D K12A45D TK12A45D PDF

    TK12A45D

    Abstract: K12A45D
    Contextual Info: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original
    TK12A45D TK12A45D K12A45D PDF