1301P
Abstract: K1206 ldmos
Contextual Info: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output
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K1206
G-200,
-877-GOLD
1301-PTE
1301P
ldmos
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k1206
Abstract: Ericsson B
Contextual Info: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,
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K1206
G-200,
1-877-GOLDMOS
1301-PTF10112
k1206
Ericsson B
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k1206
Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Contextual Info: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
k1206
cgs resistor c7
A123
transistor l2
k1206 220 r3
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k1206
Abstract: RF Transistor 1500 MHZ
Contextual Info: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
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c 4977 transistor
Abstract: transistor D 2395
Contextual Info: ERICSSON ^ PTF 10135 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation
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K1206
K1206
G-200,
1-877-GOLDMOS
EUS/KR1301-PTF
c 4977 transistor
transistor D 2395
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transistor number D 2498
Contextual Info: ERICSSON 5 PTE 10122* 50 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts minimum
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Rating10
K1206
K1206
G-200,
1-877-GOLDMOS
1301-PTE10122
transistor number D 2498
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rf mosfet ericsson
Abstract: k1206 cgs resistor c7
Contextual Info: e PTF 10112 60 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,
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Original
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
rf mosfet ericsson
k1206
cgs resistor c7
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