K11A60D
Abstract: TK11A60D K11A60
Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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tk11a60dk11a60dk11a60 |
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K11A60D
Abstract: K11A60
Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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tk11a60dk11a60dk11a60 |
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K11A60D
Abstract: K11A60 TK11A60D 11APF
Contextual Info: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)
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tk11a60dsc-672-10u1bk11a60d+2k11a6011apf
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K11A60D
Abstract: TK11A60D K11A60
Contextual Info: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)
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tk11a60dsc-672-10u1b20070701-ja+2k11a60dk11a60
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K11A60D
Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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tk11a60dk11a60d |
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K11A60D
Abstract: K11A60 TK11A60D TC200
Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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tk11a60dk11a60dk11a60tc200 |
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