K D1413 Search Results

K D1413

Abstract: kd1413 d1413 d1413 transistor KTD1413 marking K hFE kec
Contextual Info: SEMICONDUCTOR KTD1413 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D1413 816 No. Item 1 KEC K KEC CORP. 2 Device Name D1413 KTD1413 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Marking Description 8 Year

Contextual Info: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 5 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE

Contextual Info: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 4 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE

Contextual Info: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 7 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE

Contextual Info: Choke Coils Power Choke Coil for Automotive application Series: PCC-D1413H DUST Realize high heat resistance, low loss and high reliability with dust core (DUST) Industrial Property : patents 5 (Pending) • Features : Operation up to 150 °C ● High heat resistance

ETQPDH240DTV

Contextual Info: Choke Coils Power Choke Coil for Automotive application Series: PCC-D1413H DUST Realize high heat resistance, low loss and high reliability with dust core (DUST) Industrial Property : patents 5 (Pending) • Features : Operation up to 150 °C ● High heat resistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUM BER PACKAGE 2S K3356 T O -3 P designed for high current switching applications.

Contextual Info: intei 80960KA EMBEDDED 32-BIT MICROPROCESSOR • High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at 25 MHz ■ 512-Byte On-Chip Instruction Cache — Direct Mapped — Parallel Load/Decode for Uncached

VAX-11

Abstract: PLCC 68 intel package dimensions 270917 w1a31 intel core i7 processors their registers in term of 32-bit mode
Contextual Info: in te i 80960SA EMBEDDED 32-BIT MICROPROCESSOR WITH 16-BIT BURST DATA BUS • High-Performance Embedded Architecture — 20 MIPS* Burst Execution at 20 MHz — 7.5 MIPS Sustained Execution at 20 MHz ■ 512-Byte On-Chip Instruction Cache — Direct Mapped

RK618

Abstract: LOCTITE 3623 S-CH00-0157-002 DBAS 970 25 35 PN 059 ANSI-MC-96 LOCTITE 3542 M27500A22 NES 1004 naval specification SP 107156 souriau 8611
Contextual Info: Wire and Cable, Harnessing and Protection Products Table of Contents Tyco Electronics Embraces the Most Valued Brand Names Worldwide ……………………………ii About Raychem Wire and Cable, Harnessing and Heat-Shrinkable Products ………………………iii

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 TO -220AB 2SK3353-S TO-262 2SK3353-Z

Contextual Info: in tj 80960SB EMBEDDED 32-BIT MICROPROCESSOR WITH 16-BIT BURST DATA BUS • High-Performance Embedded Architecture — 16 MIPS* Burst Execution at 16 MHz — 5 MIPS Sustained Execution at 16 MHz ■ Built-In Interrupt Controller — 4 Direct Interrupt Pins

2SK3356

Abstract: MP-88
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications.

NP22N055HHE

Abstract: NP22N055IHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

2SK3356

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications.

2SK3354-S

Abstract: 2SK3354 2SK3354-Z MP-25 MP-25Z transistor d 1302
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262

2SK3353

Abstract: 2SK3353-S 2SK3353-Z MP-25 MP-25Z
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 TO-220AB 2SK3353-S TO-262

NP22N055HLE

Abstract: NP22N055ILE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

MP-25

Abstract: NP82N055CHE NP82N055DHE NP82N055EHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

2SK3354

Abstract: 2SK3354-S 2SK3354-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-Z TO-220SMD

MP-25

Abstract: NP82N055CHE NP82N055DHE NP82N055EHE
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.

NP32N055HLE

Abstract: NP32N055ILE
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.

2SK3355

Abstract: 2SK3355-S 2SK3355-Z MP-25 MP-25Z
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3355 TO-220AB 2SK3355-S TO-262

NP32N055HLE

Abstract: NP32N055ILE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.