K 4145 Search Results

STK 100W

Abstract: 4204M STK 60w 5 4154M 4144M STK4234 circuit STK 300 STK4234 4194MK5 4145M
Contextual Info: • Main Characteristics ■ STK4144MK2 series/STK4144MK5 series/STK4145MK2 series/S T \ 4 1 4 5 M K 5 series Type Number STK 4144M K 2 STK 4154M K 2 STK 4164M K 2 STK 4174M K 2 Output power PofW] 25 30 35 40 + + + + Vcc max[V] 25 30 35 40 STK 4184M K 2 & STK 4194M K 2

Contextual Info: • Main Characteristics IS T K 4 0 0 -0 1 0 series/ST K 400 - 210 series/ST K 400 - 450 series/ST K 400 - 650 series Type Number * STK400 - 010 STK400 - 020 * STK400 STK400 STK400 æ STK400 * STK400 * STK400 STK400 * STK400 « STK400 Si STK400 Si STK400 Si

hy 1418

Abstract: tetris skg50 KJU64241 NJU6424 NJU6424FC1 x1rz IEGT KU 607 VC saa 1049
Contextual Info: NJU6424 \ m f é H • « z 'n - 7 - p n ^ m Æ S Ü l f Ê L C D i l^ m h P v ^ - 7 y K v 7 y ¡j ^î /< s v t x NJU6424là, IO«T 3 'û<n K y h v h V -y ? 7. LCD £ I ^ -y ~/XMWi T 5 L C D 3 > h 0 - 7 K v 'f / 'i T , âK^x-v h 7 "v , -/' — ? C R f6 « @ K ,

km681000alt

Contextual Info: SAMSUNG EL EC T R O N I C S INC b7E D • 7^4145 KM681000AL/KM681000AL-L QÜ17SDS 70T « S r i G K CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/jW (typ.) L-Version

jd 1803 IC

Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Contextual Info: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

KD 9980

Abstract: "com coms" k7p a7 JB42 by77 12AJ2
Contextual Info: NJU6428/29 k -y i fe Æ Ü f F L C D 3 > Yu- v h y -y ? x 7F 7^ ^ •tst s NJU6428/29 li, I 2fij 2 îtOT K -y h v h 'J -y ? ^ LCD £ I f ' y 7 ' T lE Ii- f ^ L C D a > h a — K ^ - r/ '.'T - , 7 7 'M — yt&iÂ, C R fë JIS ïS , -f h 7 ? > 3 >Sl]fPSR, t t 7 Í ? ÿ

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

Contextual Info: KM M5324000B K/B KG KMM53241OOBK/BKG DRAM MODULE KMM5324000B K/B KG & KMM53241 OOBK/BKG Fast Page Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh, using 16M DRAM with 300 mil Package FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM53240 1 00BK is a 4M bit x 32

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 Ii b m H e ÜGlbflMQ 371 MSIIGK KM93C57/KM93C67 CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby; 250pA (TTL)

NTCS0805E3104

Abstract: RT 232 1048 NTC Thermistor smd 22k NTCS0805E3222 NTCS0805E3T
Contextual Info: NTCS0805E3.T Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

333HT

Abstract: 0.01 smd 0805 vishay NTCS0805E3683 K 3570 NTCS0805E3T
Contextual Info: NTCS0805E3.T/2381 615 5. Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

Contextual Info: KS88C0216 ELECTR O NICS Microcontroller DESCRIPTION The K S88C 0216/0416 is an 8-bit microcontroller which is designed for Monitor or general application. The K S88C 0216/0416 uses powerful SA M -8 C PU 2 which is improved from SA M -8 C P U . The main peripherals are

NTCS0805E3103

Abstract: NTCS0805E3474 NTCS0805E3222 E148885 NTCS0805E3 xt 684 NTCS0805E3334 NTCS0805E3T
Contextual Info: NTCS0805E3.T Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

54128

Abstract: 680K NTCS0805E3T
Contextual Info: NTCS0805E3.T Vishay BCcomponents SMD 0805, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER • TCR ranging from - 6 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering

4145i

Abstract: naban PJ 41 MG
Contextual Info: <:D1/ DA>=8 DE5E9 C9>5I :OK[\YOZ }EHA /Kjv |mooptm -K=@ ?QNNAJP mjqx rll7 >HK?GEJC RKHP=CA 1DKPK EOKH=PEKJ ;ANK ?NKOO KN N=J@KI PQNJiKJ 1NEJPA@ ?EN?QEP >K=N@ IKQJP _ _ _ _ _ _ }EHA /Kjv ,qllqtlpr |JRENKJIAJP=H BNEAJ@HU LNK@Q?P e3K*4 ?KILHE=JPf }EHA /Kv z2zlsllmlmuuqt

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

sm 6415 a-4 s

Abstract: AAHBW STR w 6053 n kss 4ff NJU642B HJUB417C IJU642BF NJU6417C NJU6426 STR w 6053 S
Contextual Info: NJU6426 8 * f j 4 L C D 3 • a K T 5 r K y LCD □ > h P - 7 h >nm&, * % t t 7 ^ y i > h trù ii 5V m - « S * ' i> ^ I o v w T SrffiU&'fbT 5>- £ * tl i fo 7 ' 7 Ä t/ 7" 'J - iâ S IE IÜ lW Œ  U '/ W y V ' i —y K ^ 'T ^ 'T ', -< >7. h 7 ? v a S IF 7 l 'A - - f y 5 '- 7 x 'í

AM29LV400B-120EC

Abstract: 2q514
Contextual Info: î>W R L I M i N A R v AMD il Am29LV400 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications