K 365 Search Results

C5-K3L

Abstract: 2R2 choke 476 25k 222
Contextual Info: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC compander, switching power supply) and other electronic equipment.

Contextual Info: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC compander, switching power supply) and other electronic equipment.

C4-K2.5L

Contextual Info: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC converter, switching power supply) and other electronic equipment.

Contextual Info: MS91189- SERIES 2890 PHENOLIC CORE LT4K R F IN D U C T O R S 2 8 9 0 -0 0 K 2 8 9 0 -0 2 K 2 8 9 0 -0 3 K 2 8 9 0 -0 4 K 2 8 9 0 -0 6 K 2 8 9 0 -0 8 K 2 8 9 0 -1 0 K 2 8 9 0 -1 2 K 2 8 9 0 -1 4 K 2 8 9 0 -1 6 K 2 8 9 0 -1 8 K 2 8 9 0 -2 0 K 2 8 9 0 -2 2 K

10K47

Abstract: k3528 6R25
Contextual Info: NTC Thermistors for temperature sensing Accuracy line Surface mount Series 2322 . . 640 0 . 640 6. 640 5. 615 1. 615 2. Resistance at 25 °C R25 = 470 Ω to 470 kΩ R25 = 3.3 Ω to 470 kΩ R25 = 2.7 kΩ, 4.7 kΩ, 10 kΩ, 47 kΩ,

C3-K

Contextual Info: MITSUMI パワーインダクタ Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters 概要／OUTLINE 電池駆動の携帯型電子機器の電源（DC-DCコンバ ータ・スイッチング電源） その他電子機器用の高効

476 25k 040

Abstract: c5-k3la C5-K2.5L 476 25k 222 mitsumi inductors C6-K3L mitsumi coils
Contextual Info: MITSUMI パワーインダクタ Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters 概要／OUTLINE 電池駆動の携帯型電子機器の電源（DC-DCコンバ ータ・スイッチング電源） その他電子機器用の高効

C10-K

Contextual Info: MITSUMI パワーインダクタ Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters 概要／OUTLINE 電池駆動の携帯型電子機器の電源（DC-DCコンバ ータ・スイッチング電源） その他電子機器用の高効

Contextual Info: CY14B108K CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

CY7C09099V

Contextual Info: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.

Contextual Info: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

CY7C09099V

Contextual Info: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.

CY7C09099V

Contextual Info: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.

Contextual Info: CY14B108K CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)

Contextual Info: DASH NO. U CODE MADE FROM GSD REVISIONS CHANGES o Cm ER 36252 ME 04/27/95 CN 36541 I ME C 08/31/95 KD CN 37799 E I TML 03/09/99 CO NOTES: 1. FOR USE WITH RG -5 9, 62 k 210/U CABLE. 2. FOR CABLING INSTRUCTIONS SEE C P -4 4 1. 3. FOR CABLE TRIMMING USE K T J-7 2 k K TD-134.

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or

ecc88

Abstract: 6922 triode E88CC 6922 e88cc jj WG1R triode 6922 trio 33 uF 400 V 6922/E88CC
Contextual Info: ECC88 - 6922 E88CC R. F. DOUBLE TRIODE Base: NOVAL Uf If Dimension and connections: = 6,3 V = 365 mA Typical characteristic: Ua = 90 V Ug = -1,3 V Ia = 15 mA S = 12,5 mA/V Ri = 2,6 kΩ µ = 33 Limiting Ua0 Ua la=0 Ua Ua(War<0,8 W) PaR Wg1R Ik Ug Rg U+k/fU-k/f+

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages

TSOJ-54

Abstract: IBM0364404CT3A-370 2798j
Contextual Info: IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: -360, CL=3 fc K ! C lo c k F r e q u e n c y tc K I C lo c k C y c le tA C I C l o c k A c c e s s T i m e 1

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)