K 3533 Search Results

Contextual Info: CY14C256Q CY14B256Q CY14E256Q 256-Kbit 32 K x 8 SPI nvSRAM 256-Kbit (32 K × 8) SPI nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

CY14B256Q

Abstract: CY14X256Q1A
Contextual Info: CY14C256Q CY14B256Q CY14E256Q 256-Kbit 32 K x 8 SPI nvSRAM 256-Kbit (32 K × 8) SPI nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

CY14B256Q2A

Abstract: CY14E256Q1A
Contextual Info: CY14C256Q CY14B256Q CY14E256Q 256-Kbit 32 K x 8 SPI nvSRAM 256-Kbit (32 K × 8) SPI nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C256Q CY14B256Q CY14E256Q 256-Kbit 32 K x 8 SPI nvSRAM 256-Kbit (32 K × 8) SPI nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C256Q CY14B256Q CY14E256Q 256-Kbit 32 K x 8 SPI nvSRAM 256-Kbit (32 K × 8) SPI nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

00165281

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C256Q CY14B256Q CY14E256Q 256-Kbit 32 K x 8 SPI nvSRAM 256-Kbit (32 K × 8) SPI nvSRAM • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using SPI

bct25244

Abstract: TI0226-D3533 SN54BCT25244 SN74BCT25244 201A3 PR00UCT
Contextual Info: SN54BCT25244, SN74BCT25244 OCTAL 25-OHM LINE DRIVERS WITH 3-STATE OUTPUTS TI0226— D 3533, J U N E 1990 PRODUCT PREVIEW State-of-the-Art BiCMOS Design Significantly Reduces Iccz SN 54BCT25244 . . . J T P A C K A G E SN 74BCT25244 . . . N T P A C K A G E TO P VIEW

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

LT3973-3.3

Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
Contextual Info: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

Contextual Info: 128 k x 8 SRAM Module molate M S 8 1 2 8 F K E -1 0 /1 2 /1 5 Issue 3.0 : November 1988 Mosaic Sem iconduct< Inc. 131,072 x 8 CMOS High Speed Static RAM ^Pln Definition Features Fast Access Times of 100/120/150 JEDEC Standard 32 pin DIL footprint Low Power Standby

ct a05

Contextual Info: A m plifiers B roadband l i \i AM P-case Q Q96 , Plug-In & Coaxial L in e a r AM P-case PP120 ZFL-case Y39/460 V a ria b le G ain 10 to 1200 MHz up to 20 mW +13 dBm output FREQ. (MHz) GAIN (dB) MODEL NO. ZFL-1000GH * ZFL-1000G ’ MAXIMUM POWER (dBm) K-K

Contextual Info: I DWG. NO. gQ 3 5 3 3 6 “* * * 0 NOTES -ISOMETR IC- 1. MATING HOUSING : 3 5 2 3 7 - * * 1 0 2. BU R R : 0 .2 MAX. 3. M ATERIAL : WAFER : P BT. U L 94V -0 G F15X PIN : B R A SS, TIN PLATED BSC . 4 . K IN K ALLIG N M ENT S f f l W T - -jsas^is (P IT C H )

K428

Abstract: ICO50565 MS27720
Contextual Info: CIRCUIT MADE WITH TOGGLE L E V E R IN a v a il a b l e CATALOG LISTING A _ -S ITWI - I I ITWI - 2 11ITWI - 3 11ITWI - 2 1 I ITWI - 3 1 LOCKING COMBINATIONS ON O FF ON D,F,G O FF NONE ON D,F,G ON NONE ON E,F,K,M E,F,K,M NONE OFF ON NONE ON ON MOM O F F NONE

TQD777001

Abstract: TQM613017 Multiband RF Transceiver 2500 MHz tx rx module 435 3M Philippines
Contextual Info: TQS - COMPANY PROPRIETARY INFORMATION SPEC TITLE: CDMA PCS Band 7x4mm PAD Passkey 2 SPEC NO: DAT.TQM663029 REV: D PAGE 0 OF 15 ECN# DESCRIPTION OF CHANGE A B 02-28-07 11-09-07 35331 38297 C 02-21-08 39442 D 09-17-08 41653 Original Documentation K. Schoenrock

Contextual Info: MOSAIC S E M I C O N D U C T O R INC blE D moiaic • L 3 S 3 3 7 T 00 D1 7T 7 b7fl M M O C _ 512 K X B SRAM M S K 5 12S C -55/70/85 Issue 3 .2 : June1993 M o sa ic S e m ic o n d u c to r lnc C Pin Definition 524,288 X 8 CMOS High Speed Static RAM Features

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 5 3 k 2 1 P r i n t e d board layout component si de Connector retention and insertion forces on the PCB = 2 5 / 8 0 newtons 09 66 09 66 09 66 09 66 09 66 09 66 Port 355 3533 355 6533 355 7533 355 3513 355 6513

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 3 k 5 2 1 P r i n t e d board Iayout component side PTH's p l a t i n g = t i n lead Connector retention and insertion forces on the PCB = 2 5 / 8 0 newtons 09 66 351 3533 M3 1 09 66 351 6533 M3 2 09 66 351 7533