K 2604 Search Results

srx 2039

Abstract: BASE200 NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Abstract: JESD79-3E NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 / PC3-14900 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600/1866 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

S0854HN

Abstract: TK68HC811E2 TK68HC711E9 stk 407 070 k 942 TK68HC811
Contextual Info: TK68HC11ETK68H C11ETK68HC11ET 8HC11KTK68HC11 C11ETEKMOSTK68 K68HC11ETK68HC 1ETK68HC11ETK6 C11KTK68HC11ET TK68HC11ETK68H TK68HC11E Family Technical Data Te k m o s Your Trusted Manufacturer for Semiconductors TK68HC11E Te k m o s Your Trusted Manufacturer for Semiconductors

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

2607 bussmann

Abstract: k 2608 k 2607 bussmann class J fuses 2611 E14853
Contextual Info: Bussmann Fuseblocks, Holders and Disconnect Switches Class H K , J and R Fuseblocks Porcelain Type Fuseblocks Modular Type Fuseblocks Class H(K) and R Dimensions Agency Approvals: UL Listed Class H & J Fuses Reinforced retaining clips standard Available in 30A and 60A, 3-pole models only.

CY7C1012DV33-10BGXI

Abstract: SRAM TTL
Contextual Info: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately

ta 8268 ah

Contextual Info: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

Contextual Info: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

CY62137EV30

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

LT3973-3.3

Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
Contextual Info: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7

64Kx8 CMOS RAM

Abstract: 64Kx8 dual-port CMOS RAM A13L IDT7M1001 IDT7M1003
Contextual Info: PRELIMINARY IDT7M1001 IDT7M1003 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE FEATURES DESCRIPTION: • High d en sity 1 M /5 1 2 K C M O S du al-port static R A M T h e ID T 7 M 1 0 0 1 /ID T 7 M 1 0 0 3 is a 1 2 8 K x 8 /6 4 K x 8 high­ s p e e d C M O S du al-port static R A M m odu le constructed on a

Contextual Info: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Functional Description Features The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This