K 2175 Search Results

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)

CY14a101

Abstract: CY14A101L
Contextual Info: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small

STR - Z 2062

Abstract: MS27490-22D 030-2155-000 MS27499 S27490-20 225-1013-000 MS27490-22 MS27513 MS27491-22M din en 3767
Contextual Info: M IL-C-38999 Series I, II, III Connectors SERIES I K JL/K J/K JA SERIES II GROUNDING FIN GERS Standard on Series I connector C LO SED EN TR Y S O C K ET CONTACT DESIGN SERIES III S H E LL HARDW ARE Is alum inum alloy HIGH STREN GTH M ULTIPLE-TINE M ETAL RETAINING CLIP

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small

CY14a101

Abstract: CY14V101LA-BA45 CY14A101L
Contextual Info: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small

948AL

Abstract: N64S830HAS22I N64S830HAT22I N64S830HAS22IT
Contextual Info: N64S830HA 64 Kb Low Power Serial SRAMs 8 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 K serially accessed Static Random Access Memory, internally organized as 8 K words by 8 bits.

TLO32

Abstract: 948AL N64S818HAS21I N64S818HAT21I
Contextual Info: N64S818HA 64 Kb Low Power Serial SRAMs 8 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 K serially accessed Static Random Access Memory, internally organized as 8 K words by 8 bits.

Contextual Info: K JL/K J/K JA M IL-C-38999 Series I, II, III Connectors SERIES II SERIES I SERIES III S H E L L H A RD W A RE is alum inum alloy H IGH STREN GTH MULTIPLE-TINE M E T A L R ETAINING CLIP assures positive retention with inwardly deflected tines that lock securely behind contact shoulder

dS 3202

Abstract: 1SS222 1SS223 VETTE
Contextual Info: * • h Silicon Switching Diodes 1SS222.223 I * 's 7 J U y ° l s - j- W s 'J =!>•?'' t - F K jß tX - f Silicon Epitaxial Diode High Speed Switching W & IÜ / P A C K A G E DIMENSIONS ¡8 * / F E A T U R E S n^ K h 7 ( ; > X X 9 (U n it : mm t L T fltt .

MC1489A

Abstract: 1N3064 232D MC1488 MC1489 MC1489AD MC1489ADR2 MC1489D MC1489DR2
Contextual Info: MC1489, MC1489A Quad Line Receivers The MC1489 monolithic quad line receivers are designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard No. EIA–232D. • Input Resistance – 3.0 k to 7.0 kΩ

Contextual Info: N25S830HA 256 kb Low Power Serial SRAMs 32 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by

Contextual Info: Ordering number : EN6042 Thick-Film Hybrid 1C S T K 6 7 2 - 1 2 0 /«S/li ////k m g m ' Unipolar Fixed-Current Chopper Self-Excited PWM Scheme and Built-in Phase Signal Distribution IC Two-Phase Stepping Motor Driver

N25S830HAS22IT

Abstract: 948AL N25S830HAS22I N25S830HAT22I N25S830HAT22IT N25S830HAS2
Contextual Info: N25S830HA 256 Kb Low Power Serial SRAMs 32 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 Kb serially accessed Static Random Access Memory, internally organized as 32 K words by

N25S818HAT21I

Abstract: 948AL N25S818HAS21I
Contextual Info: N25S818HA 256 Kb Low Power Serial SRAMs 32 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 Kb serially accessed Static Random Access Memory, internally organized as 32 K words by

MC1489A

Contextual Info: Back MC1489, MC1489A Quad Line EIA-232D Receivers The MC1489 monolithic quad line receivers are designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard No. EIA–232D. • Input Resistance – 3.0 k to 7.0 kΩ

Contextual Info: MC14027B Dual J-K Flip-Flop The MC14027B dual J−K flip−flop has independent J, K, Clock C , Set (S) and Reset (R) inputs for each flip−flop. These devices may be used in control, register, or toggle functions. Features • • • • • • • •

Contextual Info: MC14027B Dual J-K Flip-Flop The MC14027B dual J−K flip−flop has independent J, K, Clock C , Set (S) and Reset (R) inputs for each flip−flop. These devices may be used in control, register, or toggle functions. Features • • • • • • • •

CD4027* free

Abstract: 14027B MC14027BCP MC14027BD MC14027BDR2 MC14027BF MC14027BFEL CD4027B MC14027B
Contextual Info: MC14027B Dual J-K Flip-Flop The MC14027B dual J–K flip–flop has independent J, K, Clock C , Set (S) and Reset (R) inputs for each flip–flop. These devices may be used in control, register, or toggle functions. • • • • • • Diode Protection on All Inputs

14027B

Abstract: MC14027B CD4027B MC14027BCP MC14027BD MC14027BDR2 MC14027BF MC14027BFEL
Contextual Info: MC14027B Dual J-K Flip-Flop The MC14027B dual J–K flip–flop has independent J, K, Clock C , Set (S) and Reset (R) inputs for each flip–flop. These devices may be used in control, register, or toggle functions. • • • • • • Diode Protection on All Inputs

MC14027B

Contextual Info: MC14027B Dual J-K Flip-Flop The MC14027B dual J–K flip–flop has independent J, K, Clock C , Set (S) and Reset (R) inputs for each flip–flop. These devices may be used in control, register, or toggle functions. • • • • • • Diode Protection on All Inputs

ha2-2700

Abstract: A715 transistor ci 1458 texas js 8017 MPC16S MA747 HA-2700 CM4016 Fairchild Semiconductor S2M UA715
Contextual Info: BURN-IN CIRCUITS H A-2700 HA-2700 TO-99 "I 3 j " - v w — O— NOTES: T A = +125oC R1 = 1 M e g o h m H A-2720 NOTES: TA =+125° C -|C 2 = 0 .0 1 t o 0.1 JUF R-| = 1 K£2 NOTES: T a = + 1 2 5 °c R-j = 1 M e g o h m TO-99 R 'j = 1 0 K i2 R 4 = 5 K i2 R2 = 2 M i i

74S700

Abstract: S731-1 s7311 S7001 74S734 s7341
Contextual Info: 8-Bit Dynamic-RAM Drivers FOR MORE DETAIL SEE SECTION with Three-State Outputs SN54/74S700/-1 SN54/74S731/-1 8 SN54/74S730/-1 SN54/74S734/-1 Ordering Inform ation Features/Benefits: • Provides MOS voltage levels for 16 K and 64 K D-RAMs PART NUMBER PKG TEMP ENABLE POLARITY POWER

Contextual Info: fax id: 5413 CY7C4255 CY7C4265 CYPRESS 8 K /1 6 K x 1 8 D e e p S y n c F IF O s Features are 18 bits wide and are pin/functionally compatible to the CY7C42X5 Synchronous FIFO family. The CY7C4255/65 can be cascaded to increase FIFO depth. Programmable features

BAP 16 voltage regulator

Abstract: BAP 52
Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP II) ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) compliant ■ 20 ns, 25 ns, and 45 ns access times