K 2134 Search Results

intel 82489dx

Contextual Info: A P W A N K g l 0 M F K m T O ® K l in te i 82489DX ADVANCED PROGRAMMABLE INTERRUPT CONTROLLER 82489DX FEATURES OVERVIEW Inter-Processor Interrupts • Advanced Interrupt Controller for 32-Bit Operating Systems Various Addressing Schemes— Broadcast, Fixed, Lowest Priority, etc.

Contextual Info: M K 2/12 SLS2/2 SLS2/4 D irect M ount Term inals Feed Through M K 10/14 M K 3/12 m; O j- Hi e o .e s Dim ensions W idth/Length/Height mm mm in. Insulation stripping length mm mm (in.) 8.5 / 13.5 / 12 (3.48/.53/.47J 8 6 / 1 5 / 1 5 (3.39/.S9/.59)

PDTA143XE

Abstract: SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ

PDTC143XE

Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ

PDTA124XE

Abstract: PDTC124XE SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ

PDTA124XE

Abstract: PDTC124XE SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ

KD 9980

Abstract: "com coms" k7p a7 JB42 by77 12AJ2
Contextual Info: NJU6428/29 k -y i fe Æ Ü f F L C D 3 > Yu- v h y -y ? x 7F 7^ ^ •tst s NJU6428/29 li, I 2fij 2 îtOT K -y h v h 'J -y ? ^ LCD £ I f ' y 7 ' T lE Ii- f ^ L C D a > h a — K ^ - r/ '.'T - , 7 7 'M — yt&iÂ, C R fë JIS ïS , -f h 7 ? > 3 >Sl]fPSR, t t 7 Í ? ÿ

PDTC114YE

Abstract: SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ

rcl 3702

Abstract: ICL 3057 C0M30 km 3702 TRW 3894 IR LFN NJU6576 NJU6576CH 50umX 101x34
Contextual Info: NJU6576 3 4 3 Ï > X 1 0 1 fc ? y • tt h t t î * h T ' ^ ^ L C D K UH * NJU6576 H W W W Ì K r t & m ' m ì t e t ' l i w 7 * f / ^ m LCD h* 5<rt* T?, 3, 434t' 7h Ö * « f -WAM. CPUW-7i-fX@», 3î>/W «4 *K*in* *T? #*/¡es¡h.£-f. iw x*m -7i« b iiii= t.cp u * t. ä e>*x

LT3973-3.3

Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
Contextual Info: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7

TC-799

Abstract: NEC 2sk2134 nec 2134 2sk2134
Contextual Info: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.

MARKING 9AB

Abstract: A3PN030Z A3PN250Z
Contextual Info: Revision 8 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS

actel date code

Contextual Info: Revision 8 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS

74HC113

Abstract: D Flip Flops
Contextual Info: SN 54H C 113. SN 74H C 113 DUAL J K NEGATIVE-EDGE-TRIGGERED FLIP FLOPS WITH PRESET D 2 6 8 4 , DECEMBER 1 9 8 2 -R E V IS E D SEPTEMBER 1 9 8 7 T O P V IEW L J 14 1C LK Ü Dependable Texas Instruments Quality and Reliability 1 K L 1J C ip r e h description

XC3000

Contextual Info: K XC3000 Logic Cell Array Families Table o f Contents XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families.2-105

SCR 131- 6 WJ 60

Abstract: JRC 3414 SCR 131- 6 WJ 69 SCR 131- 6 WJ 66 SCR 131- 6 WJ 59 SCR 131- 6 WJ 68 SCR 131- 6 WJ 67 SCR 131- 6 WJ 65 JRC 2746 JRC 2521
Contextual Info: NJU6561 M U » 4 9 z i ;E : / x 8 y 0 'i r '/ y > h 7 * ; ^ L C h t t i * D • ff s /< ■ NJU6561 l ì , *t7$ W 7 7 0 $ * * # W fë & t’ » LCDh* 7-ÍA* T ', 3, 920t* í i K O S í f t ' -SRAM, CPU-ÍVÍ-^I-ÍXIIIS. 3ï>/-fc^* » >■ K ^ r t ' W V « f iE é ^ íf o

dallas ds80c320 high speed micro guide

Abstract: DS1640
Contextual Info: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .

PSSI2021SAY

Abstract: philips components LED Philips MARKING CODE BP317 5F marking code transistor S1p MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage MBD127 PSSI2021SAY Constant current source Product specification 2001 May 07 Philips Semiconductors Product specification Constant current source PSSI2021SAY FEATURES PINNING • One chip constant current source

Contextual Info: Dual Aido Analog S/vitches ANALOG DEVICES SSM2402/SSM2412 FEATURES “ C lickless” B ilateral A u d io S w itc h in g G u a ra n te ed “ B re a k -B e fo re -M a k e ” S w itc h in g Low D is to rtio n : 0.003% typ Low Noise: 1 n V /^ H z S u perb O FF -lso latio n : 120 dB ty p

smd schottky diode s6

Abstract: smd schottky diode s6 33 smd diode S6 41 smd schottky diode marking s6 smd schottky diode s6 ca Diode smd s6 68 Diode smd s6 95 smd diode S6 1PS76SB62 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 1PS76SB62 Schottky barrier diode Product specification 2001 Feb 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB62 FEATURES PINNING • Ultra high switching speed PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D252 CGY887A CATV amplifier module Preliminary specification Supersedes data of 1998 Nov 02 1999 Mar 30 Philips Semiconductors Preliminary specification CATV amplifier module CGY887A FEATURES PINNING - SOT115J

smd schottky diode marking 72

Abstract: smd diode schottky code marking A4 BAT760 smd diode code A4 BP317 SC-76 M3D049
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAT760 Schottky barrier diode Product specification 2001 Mar 12 Philips Semiconductors Product specification Schottky barrier diode BAT760 FEATURES PINNING • Ultra high-speed switching PIN DESCRIPTION

SMD DIODE gp 817

Abstract: BA592 PHILIPS DIODE smd marking A1 BP317 1/GP-045
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BA592 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 07 Philips Semiconductors Preliminary specification Band-switching diode BA592 FEATURES , PINNING SOD323

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product specification File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43