K 2037 Search Results

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

Contextual Info: FINAL Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

a*29f10

Abstract: 22D9
Contextual Info: FINAL Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: FINAL Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

29f1008

Abstract: 29f100
Contextual Info: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

5252 F 0911

Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
Contextual Info: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable

Contextual Info: FINAL AMD£I Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

CY62137EV30

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: DRAFT AMDH A m 2 9 F 1 0 0 A 1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Sim plifies system-level power requirements ■ — Embedded Program algorithm automatically

Contextual Info: FIN AL A M D ii Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

LMM 2057

Abstract: TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932
Contextual Info: aJ}1E R^kb^l SZ[e^ O37 aJ3@s R^kb^l CaZkm O39 ,5M- Aiieb\Zmbhg Gnb]^ebg^l O3: aJ{z OZkm Mnf[^k Rrlm^f O369 {`aJbW SZiibg` Ri^\b_b\Zmbhgl O36: 1obW OZ\dbg` Ri^\b_b\Zmbhgl O36; K^Z] Fhkfbg` Ri^\b_b\Zmbhg O36< LbgbZmnk^ Sri^ O36= ymJ G^g^kZe Onkihl^ O387 =H>J

8242

Abstract: ta 8221 h K 9682 upd78f ic 8275 UPD78F9418
Contextual Info: IC dependence of osci Hating char «eteri st Ies UPD78F9418 FCR5.0HC5 - STD \ K It« i \ I. m VIH/V1L b. R o o k Temp. Vdd m V2H/V2L 23 5.3 IS 5.4 83 5.4 .6 .6 .5 c. O th ] d. CV3 S ChS] i. Item a*e K3 f. m g. CV3 Foso T r it t Duty V rtart VhoH 4.9753 158

AC2037

Abstract: ucc 104 CQ 527
Contextual Info: 8/90 _ ODUŒ HR • 2225-K Martin Avenue, Santa Clara, CA 95050 FAX C O M P O N E N T S ^A ^ m r 408 492-1400 (408)492-1500 I V 0 0 0 M " T t l- f iî Cascadable rl ia K n a r ia hï TO-8 Amplifier ( Outline Drawings AC2037 (Typical Values)

Contextual Info: H E W L E T T - P A C K A R D / C H PN TS blE ]> • H H H 7 S Ö H □OGflb'n =125 « H P A W hp\ H EW LETT m L f iM P A C K A R D Eight Character 5.0 mm 0.2 inch Hermetic Smart 5 X 7 Alphanumeric Displays For M ilitary Applications Technical Data Features

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

660T

Abstract: DT-2R722-A7
Contextual Info: MICRO SWITCH FREEPORT CATALOG IL L IN O IS . U. S. A SW ITCH-BASIC A D IVISION O F HO N EY W ELL INC. LISTING D T -2 R 7 2 2 -A 7 FED. MFG. CODE SI920 h< I - CM 'k CM 2 -.075 MAX PRETRAVEL LU OC o CVJ < y CL .6I5±.0I5 OPERATING POSITION i .22 U K Z kl r .6 6 0 4 .0 3 0