22D9 Search Results
22D9 Price and Stock
Cantherm MF72-022D9ICL 22 OHM 20% 1A 11MM | 
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TE Connectivity 222D953-25-0HEATSHRINK BOOT 90DEG SZ53 BLK | 
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TE Connectivity 222D921-4-42-0HEATSHRINK BOOT 90DEG SZ21 BLK | 
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TE Connectivity 222D953-4-42-0HEATSHRINK BOOT 90DEG SZ53 BLK | 
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TE Connectivity 222D932-4-0HEATSHRINK BOOT 90DEG SZ32 BLK | 
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222D932-4-0 | Bulk | 175 | 
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22D9 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AM29F100TContextual Info: HNA: AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V + 10% for read, erase, and program operations — Simplifies system-level power requirements  | 
 OCR Scan  | 
Am29F100 8-bit/64 16-bit) AM29F100T | |
29f1008
Abstract: 29f100 
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 OCR Scan  | 
Am29F100 8-bit/64 16-bit) 29F100 29f1008 29f100 | |
2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F 
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 OCR Scan  | 
TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F | |
PM554
Abstract: LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F 
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 OCR Scan  | 
PM5543 155Mbit/s PMC-951036 PM554 LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F | |
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 Contextual Info: AMD£I FINAL Am29F100T/Am29F1OOB 1 Megabit 131,072 x8-bit/65,536 x16-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ ■ — Automatically programs and verifies data at  | 
 OCR Scan  | 
Am29F100T/Am29F1OOB x8-bit/65 x16-bit) 48-pin Am29F100T/Am29F100B | |
29F100T
Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100 
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 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100 | |
MX29F100TContextual Info: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/1999 PM0548 MX29F100T | |
29F100TContextual Info: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 29F100T | |
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 Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte CompatiPM0548 DEC/21/1999 | |
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 Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents  | 
 OCR Scan  | 
8-bit/64 16-bit) Am29F100 | |
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 Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents  | 
 OCR Scan  | 
8-bit/64 16-bit) 5555h Am29F100 | |
a*29f10
Abstract: 22D9 
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 Original  | 
Am29F100 8-bit/64 16-bit) 20-year a*29f10 22D9 | |
2AAA 5555
Abstract: AM29F100A UG15 
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 OCR Scan  | 
8-bit/64 16-bit) Am29F100 20-year 2AAA 5555 AM29F100A UG15 | |
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 Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001 | |
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ssf 7509 equivalent
Abstract: lt 747B PM 8058 SMD code 307C interfacing 8279 to the 8086 mac 87A6 TA 7176 IC smd cross reference msd 702F MSD 7818 S19208CBI 
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 Original  | 
S19208CBI S19208CBI: ssf 7509 equivalent lt 747B PM 8058 SMD code 307C interfacing 8279 to the 8086 mac 87A6 TA 7176 IC smd cross reference msd 702F MSD 7818 | |
FJ 3528 clock
Abstract: GAM-17 
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 OCR Scan  | 
16-Bit TMP95CS54 TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 FJ 3528 clock GAM-17 | |
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 Contextual Info: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Sector protect/unprotect for 5V only system or 5V/  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 | |
476d capacitor
Abstract: 476C capacitor 74HC541DW PM554 PM5101 apl 117 hall ic a03e 74XXX08 PM5543 map 3222 
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 Original  | 
PM5543 155Mbit/s PM5543 ADM155 PMC-951036 476d capacitor 476C capacitor 74HC541DW PM554 PM5101 apl 117 hall ic a03e 74XXX08 map 3222 | |
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 Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80ms-- 80us-- | |
| 
 Contextual Info: FINAL Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements  | 
 Original  | 
Am29F100 8-bit/64 16-bit) | |
16b3 zener diode
Abstract: Zener Diode 13B3 ltsx e3 Zener 13B3 XC95288XL-PQ208 plx9054 ieee.std_logic_1164.all plx9054 16b3 C143 ESP Zener diode 10b3 
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 Original  | 
PMC-1990887 AAL1GATOR-32 PM73122 AAL1GATOR-32 16b3 zener diode Zener Diode 13B3 ltsx e3 Zener 13B3 XC95288XL-PQ208 plx9054 ieee.std_logic_1164.all plx9054 16b3 C143 ESP Zener diode 10b3 | |
| 
 Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz  | 
 Original  | 
MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001 | |
| 
 Contextual Info: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements  | 
 OCR Scan  | 
Am29F100T/Am29F100B 8-Bit/65 16-Bit) 48-pin 29F100T/Am29F100B 29F100 | |
| 
 Contextual Info: FINAL AMD£I Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically  | 
 OCR Scan  | 
Am29F100 8-bit/64 16-bit) 20-year | |