K 117 Search Results

C12-K

Contextual Info: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC converter, switching power supply) and other electronic equipment.

Contextual Info: CY7C0851V/CY7C0851AV CY7C0852V/CY7C0852AV CY7C0853V/CY7C0853AV FLEx36 3.3 V 32 K / 64 K / 128 K / 256 K x 36 Synchronous Dual-Port RAM FLEx36™ 3.3 V 32 K / 64 K / 128 K / 256 K × 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access

Contextual Info: CM100MXA-24S NX-S Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"

aj 312

Contextual Info: CM75MXA-24S NX-S Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"

Contextual Info: CM50MXA-24S NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 50 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A" Z

ic 741 free

Abstract: current to voltage converter using IC 741
Contextual Info: CM50MXA-24S NX-S Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 50 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"

CSTBT igbt

Contextual Info: CM100MXA-24S NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/1200 Volts A AG D AJ AK AH E F K G J K H L K L K K L K M K AA AB C K DETAIL "A"

Contextual Info: CY7C1361C, CY7C1363C 9-Mbit 256 K x 36/512 K × 18 Flow-Through SRAM 9-Mbit (256 K × 36/512 K × 18) Flow-through SRAM Functional Description Features • Supports 100 MHz, 133 MHz bus operations ■ Supports 100 MHz bus operations (Automotive) ■ 256 K × 36/512 K × 18 common I/O

Contextual Info: CY7C1361C, CY7C1363C 9-Mbit 256 K x 36/512 K × 18 Flow-Through SRAM 9-Mbit (256 K × 36/512 K × 18) Flow-through SRAM Features Functional Description • Supports 100 MHz, 133 MHz bus operations ■ Supports 100 MHz bus operations (Automotive) ■ 256 K × 36/512 K × 18 common I/O

Contextual Info: MN102H730F , MN102H73G , MN102H73K Type MN102H730F MN102H73G MN102H73K ROM x× 8-bit External 128 K 256 K RAM (×× 8-bit) 10 K Package TQFP128-P-1414B 10 K *Lead-free 12 K TQFP128-P-1414A *Lead-free Minimum Instruction Execution Time With main clock operated

TMP86C829B

Abstract: TMP86C929AXB TMP86CH29B TMP86CM29B TMP86FM29 TMP86PM29A 86FM29-3 TMP86 86c929
Contextual Info: TMP86FM29 Difference Comparison table of TMP86C829B/H29B/M29B/PM29A/PM29B/C929AXB and TMP86FM29 TMP86C829B TMP86CH29B TMP86CM29B TMP86PM29A TMP86PM29B TMP86C929AXB Emulation chip (Note 3) TMP86FM29F ROM 8 K (Mask ROM) 16 K (Mask ROM) 32 K (Mask ROM) 32 K (OTP)

Contextual Info: MN103004K , MN103016K Type MN103004K MN103016K Command ROM x× 64-bit 256 K-byte 256 K-byte Data RAM (×× 32-bit) Package (Conventional Package) 10 K-byte *Lead-free QFP208-P-2828F (QFP208-P-2828A) 10 K-byte , FLGA239-C-1313 Minimum Instruction Execution Time

proton rx 4000 watts power amplifier circuit diagram

Abstract: Hamamatsu r300 0812E H5783
Contextual Info: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated

CY7C1355C

Contextual Info: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead

CY7C1355C

Contextual Info: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

Contextual Info: Technical Data „ , CD54/74AC109, CD54/74AC112 CD54/74ACT109, CD54/74ACT112 Advanced Information Dual “J-K” Flip-Flop with Set and Reset CD54/74AC/ACT109 - Positive-Edge-Triggered J, K CD54/74AC/ACT112 - Negative-Edge-Triggered (J, K) Type Features:

Contextual Info: Technical Data , CD54/74AC109, CD54/74AC112 CD54/74ACT109, CD54/74ACT112 Advanced Informaron Dual “J-K” Flip-Flop with Set and Reset CD54/74AC/ACT109 - Positive-Edge-Triggered J, K CD54/74AC/ACT112 - Negative-Edge-Triggered (J, K) Type Features: • Buffered inputs

t24c02

Abstract: M08A NM24C02L NM24C04L
Contextual Info: NM24C02L/C04L/C08L/C16L National Semiconductor NM24C02L/C04L/C08L/C16L 2 K -/4 K -/8 K -/16K-Bit Serial EEPROM l2C Synchronous 2-Wire Bus General Description Features The NM24C02L/C04L/C08L/C16L devices are 2048/ 4096/8192/16,384 bits, respectively, of CMOS non-volatile

P02N

Contextual Info: SflE D • b 7 2 4 2 4 0 0 0 1 4 5 1 7 Ibô « O K I J O K I Semiconductor - r - s « . - is - 9 K I S E M I C O N D U C T O R GROUP M S C 1172 40-BIT ANODE/GRID DRIVER GENERAL DESCRIPTION The MSC1172 is a monolithic IC using Bi­ CMOS process for hybridizing CMOS and

k3661

Abstract: DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L
Contextual Info: HYMD212G726K4-K/H/L 128Mx72 Registered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD212G726K4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 128Mx72 high-speed memory arrays. HynixHYMD212G726K4-K/H/L series

Digital Potentiometer

Abstract: 11195C potentiometer 100 k MCP41010 MCP41050-I/P mcp42050 MCP41050 MCP41100 MCP41XXX MCP42100
Contextual Info: M MCP41XXX/42XXX Single/Dual Digital Potentiometer with SPI Interface Features Description • 256 taps for each potentiometer • Potentiometer values for 10 kΩ, 50 kΩ and 100 kΩ • Single and dual versions • SPI™ serial interface mode 0,0 and 1,1

ky 202 h

Contextual Info: 256MB, 512MB, 1GB: x72, SR 244-Pin DDR2 VLP Reg. MiniDIMM Features DDR2 VLP Registered MiniDIMM MT9HVF3272(P)K – 256MB MT9HVF6472(P)K – 512MB MT9HVF12872(P)K – 1GB (Advance) For the latest data sheet, refer to the Micron’s Web site: www.micron.com/products/modules

705EN

Abstract: DM8167
Contextual Info: 128MB, 256MB, 512MB x72, SR 244-Pin DDR2 Reg. MiniDIMM Features DDR2 SDRAM Registered MiniDIMM MT5HTF1672(P)K – 128MB MT5HTF3272(P)K – 256MB MT5HTF6472(P)K – 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules