K 1153 Search Results

Contextual Info: CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833V FLEx18 3.3 V 128 K / 256 K / 512 K x 18 Synchronous Dual-Port RAM FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM Features Functional Description • True dual-ported Memory cells that allow simultaneous access

KRE 101 2011

Abstract: psoc c code for ring counter CY7C0831AV CY7C0832AV CY7C0833V A120S
Contextual Info: CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833V FLEx18 3.3 V 128 K / 256 K / 512 K x 18 Synchronous Dual-Port RAM FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access

Contextual Info: CY7C0831AV CY7C0832AV CY7C0833V FLEx18 3.3 V 128 K / 256 K / 512 K x 18 Synchronous Dual-Port RAM FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access

Contextual Info: CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833V FLEx18 3.3 V 128 K / 256 K / 512 K x 18 Synchronous Dual-Port RAM FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM Functional Description Features • True dual-ported memory cells that allow simultaneous access

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

DDA11A

Abstract: ma 6116 f6 tms 4408 d6d1 tele lg tv 29" circuits diagrams colour tv Pt 1000 sensor siemens Siemens norm SN 40 263
Contextual Info: SIEMENS Teletext Processor SD A 5243-2 Preliminary Data MOS 1C Features • • • • • • • • • Microcomputer controlled via I2C bus includes full memory access Uses standard 8 K x 8 static, 8 K x 8 dyn. or two 8 K x 4 dyn. RAMs Can store 8 teletext pages and acquire 4 pages simultaneously

jd 1803 IC

Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Contextual Info: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-

aah1

Abstract: at9 am NJU6437 NJU6437C IC AAH1 1/TDA 7665
Contextual Info: C3R<g] NJU6437 1 / L C D K 5 -f A g| NJUB437I*, W* f J W r <DLCD£1/4j' i^- T S H & T S L C D K tA iv - - e f o H D K 5 - ilf W » h i - “ r n ' i , 4 K 5-fn" & t> '3 2 h " ^-fn" I H j j T ' 12 8 ttf" ^ h ^ r l g U b f 5 CI ¿ * i T ? é S f . * fc , NJUB437(W WWIMSK!DSi^(c«S-e-r.

54ACT11534

Abstract: 74ACT11534 D2957 ACT11374
Contextual Info: 54ACT11534, 74ACT11534 OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS TI0088— D 2957, JULY 1987— REVISED M ARCH 1990 5 4 A C T 11 5 34 . . . J T P A C K A G E 7 4 A C T 11534 . . . D W O R N T P A C K A G E Inputs are TTL-Voltage Compatible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

rs 5493 data sheet

Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0918

Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
Contextual Info: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

5252 F 0911

Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
Contextual Info: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.

T1189N

Abstract: T718N T1509N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VRRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl

135 D 4 e

Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

T1258N

Abstract: T348N T398N T828N T1078N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

NTCS0402E3104

Abstract: NTCS0402E3103 NTCS0402E3223 0 261 203 456 LT 616 461 NTCS0402E3104HT NTCS0402E3473 NTCS0402E3153
Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

thyristor to 582

Abstract: T1078N T1258N T398N T828N KC30 613
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl

T1078N

Abstract: T1258N T348N T398N T828N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

NTCS0402E3223

Abstract: ntc 901
Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

LT 537

Abstract: 80502
Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

Contextual Info: PRELIMINARY CY14V116N 16-Mbit 1024 K x 16 nvSRAM Features • 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 30-ns and 45-ns access times ❐ Logically organized as 1024 K × 16 ❐ Hands-off automatic STORE on power-down with only a small capacitor