K 1113 Search Results

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

common collector PNP

Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ

Contextual Info: PROJECT NO. SIMILAR ITEM DWG. NO. SD-3530 I- 5 3 I— O O 33 CD ° ¡5 oo 5 NEW RELEASED NO. K O R 2 0 0 1-0048 EC DRW Ns K oSo K IM C H 'K s / CO 11130 J.K.O H w A P P R : CoWoLEE REV D E S C R IP T I O N 2l 9o a33 o > 7.2 4.4 CJ 12.8) 33 33 > > “0 £

proton rx 4000 watts power amplifier circuit diagram

Abstract: Hamamatsu r300 0812E H5783
Contextual Info: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated

STR - Z 2062

Abstract: MS27490-22D 030-2155-000 MS27499 S27490-20 225-1013-000 MS27490-22 MS27513 MS27491-22M din en 3767
Contextual Info: M IL-C-38999 Series I, II, III Connectors SERIES I K JL/K J/K JA SERIES II GROUNDING FIN GERS Standard on Series I connector C LO SED EN TR Y S O C K ET CONTACT DESIGN SERIES III S H E LL HARDW ARE Is alum inum alloy HIGH STREN GTH M ULTIPLE-TINE M ETAL RETAINING CLIP

Contextual Info: HYMD2166466-K/H/L 16Mx64 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR2D0@ CL=2) Function Supported Hex* Value Function Description Byte# Note K Number of Bytes written into serial memory at module

Contextual Info: Ä G M & K K S l O ÎM [F @ K [îfl ¥ D M in te i 82595FX ISA BUS HIGH INTEGRATION ETHERNET CONTROLLER Optimal Integration for Lowest Cost Solution — Glueless 8-Bit/16-Bit ISA Bus Interface — Provides Fully 802.3 Compliant AUI and TPE Serial Interface

28F400B1

Abstract: TS0P48
Contextual Info: PRELIMINARY MICRON MT28F400B1 256K x 16 512K x 8 F L A S H M EM O RY I FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Sev en era se b lo ck s: 1 6 K B /8 K -w o rd b o o t blo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s

TGE-5

Abstract: ADC0820BJ
Contextual Info: - y k iv ix iy k i CMOS H igh S p eed A /D C o n v e rte r w ith T ta c k /H o id F u n c tio n - Features ♦ + Single +5V Supply + No External Clock + Easy Interface To Microprocessors Ordering Information Maxim’s ADC0820 is pin-compatible with National

dda006

Abstract: TIC 33 LCD STK 5331 TK68HC711 68HC11K TK68HC711KS2 68HC11KS8 PB1AD
Contextual Info: TK68HC11KTK68H C11KTK68HC11KT 8HC11KTK68HC11 C11KTEKMOSTK68 K68HC11KTK68HC 1KTK68HC11KTK6 C11KTK68HC11KT TK68HC11KTK68H TK68HC11K Family Technical Data Te k m o s Your Trusted Manufacturer for Semiconductors TK68HC11K Te k m o s Your Trusted Manufacturer for Semiconductors

Contextual Info: M 2 7 C 2 5 6 /E 2 7C 2 5 6 256 K CMOS EPROM March 1987 Features Description • 2 5 6 K 32K x S C M O S EPROM SEEQ's27C256 is the industry’s firs t 256KCMOS EPROM. lth a s a 3 2 K x 8 organization and has very low pow er dissipation. Its active current is less

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

3dm3

Abstract: 16mx16d
Contextual Info: HYMD116M645A8-K/H/L 16Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L (D D R 200«C L=2) Function Supported H e x a V a lu e F u n c tio n D e s c rip tio n Byte# Note K Number of Bytes written into serial memory at module

Contextual Info: Ü H A y K T M B H b ie 6 ecKOHTaKTHbie BbnaiJonaTejiM H o M e H K n a iy p a m n a p a M e rp b i H a n p s u K e m ie r m T a m ifi n o c T O f iH H o r o TO K a o; s I CD -I* 2 CD Tunopa3M ep X O O C CQ 2 □; =r m 3 I- <0 £ CO Q. O O CO CO Q_ CxeMbi noAK/noHem/m

4580C

Contextual Info: M H A yK TM B H b ie 6 e C K O H T a K T H b ie H o M e H B b lK J lt O H a T e J lM K n a i y p a m n a p a M e r p b i H a n p ^ D K e H iie n i/ iT a m if l n O C T O H H H O rO T O K a o o; O I 1 5 «o □; C x e M b i n o flic n t o H e H M S i « i c T p e iv m B b iB O fla M M

AF6 din 74

Contextual Info: CMOS DRAM KM416V1OOOA/A-L/A-F 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC K M 416 V 1000 A -6/A -L 6/A -F 6 60ns 15ns 110ns K M 416 V 1000 A -7/A -L 7/A -F 7 70ns 20ns 130ns K M 416 V 1000 A -8/A -L 8/A -F 8

T1059N

Abstract: T1589N T2159N T308N T458N T709N KD202V
Contextual Info: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl

T1059N

Abstract: T308N T458N T709N
Contextual Info: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl Dioden

Contextual Info: HYMD1327258-H/L 32MX72 DDR SDRAM Unbuffered DIMM SERIAL PRESENCE DETECT Bin Sort : K DDR 266A CL=2 , H (D D R 266B @ C U 2.5), L (D D R 200«C L=2) Function Supported Byte# H e x a V a lu e Note F u n c tio n D e s c rip tio n H K L K H Number of Bytes written into serial m em ory at module

T1059N

Abstract: T1589N T308N T458N T459N T709N k0 358
Contextual Info: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

ADC0820BJ

Contextual Info: y k i y j x i > k i CMOS High Speed A /D Converter w ith Track/Hold Function _ General Description _ Features ♦ Fast Conversion Time: 1.4/us Max. ♦ Built-in Track-and-Hold Function T he ADC0820 is a high speed, m icroprocessor co m ­

gx 6101 d

Abstract: CHE 6100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72BB32SG and M C M 72BB64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor. The

tyco v23076-a3001-c132

Abstract: V23076-A1001-D143 V23076-A1001-C133 v23076-a3001-c132 V23133A3001C132
Contextual Info: Automotive Relays PCB Single Relays Power Relay K Open – Sealed n Limiting continuous current 45A voltage range n 24VDC coil versions available n For high current version refer to Power Relay K-S n Wide Typical applications ABS control, blower fans, car alarm, cooling fan, engine control, fuel pump,

6116 SRAM

Abstract: IZ48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B F32S G and M C M 72B F64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r the Pentium m icroprocessor.