JUNE1998 Search Results

TMS320C30 Evaluation Module

Abstract: SPRU035 TMS320C32 RX 150 batch counter W063 SPRA021
Contextual Info: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

Contextual Info: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

Contextual Info: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus

Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus

P3100SB

Abstract: CYG20XX CYG2217 CYG2911 teccor sidactor 600-150
Contextual Info: APPLICATION NOTE AN-124 FCC “B” Surge Requirements AN-124 Meeting the new FCC ‘B’ surge requirements with the CYG20XX/CYG2911 series DAA modules. Introduction Starting in June1998 the FCC, under the Code off Federal Regulations CFR 47 part 68 had adopted a

CL30

Abstract: Architecture of TMS320C4X FLOATING POINT PROCESSOR SPRA021 SPRU035 TMS320C32 tartan library HEX30
Contextual Info: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus

JANSR2N7292

Contextual Info: JANSR2N7292 B Formerly FRF150R4 June1998 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 25A, 100V, ros(ON = 0.070Q The Harris Semiconductor Sector has designed a series of S ECOND GENERATION hardened power M OSFETs of both

Contextual Info: &«¿»ass JANSR2N7294 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET Formerly FRF250R4 June1998 Description Features • 23A, 200V, ro s O N = 0.115Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% B V q s s

IC SEM 2105

Contextual Info: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus

TMS320C3X

Abstract: MYSTERY MR 2.75 sprt125 Architecture of TMS320C4X FLOATING POINT PROCESSOR INSTRUCTION SET of TMS320C4X SPRA021 SPRU035 TMS320C32 TMS320C3X/C4X
Contextual Info: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

rts30g

Abstract: TMS320C40 cregister dsp SPRA021 TMS320C3X SPRU035 TMS320C32 SPRU034H TOWARD AC30
Contextual Info: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

LVC646A

Abstract: SN54LVC646A SN74LVC646A
Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus

Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus

Contextual Info: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s

EV2200-40

Abstract: PCB design layout of gas leakage alarm
Contextual Info: bq2040 Gas Gauge IC With SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2040 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record

TDA7267

Contextual Info: TDA7267 2W MONO AMPLIFIER CAN DELIVER 2W THD 10% 12V/8Ω INTERNAL FIXED GAIN 32dB NO FEEDBACK CAPACITOR NO BOUCHEROT CELL THERMAL PROTECTION AC SHORT CIRCUIT PROTECTION SVR CAPACITOR FOR BETTER RIPPLE REJECTION LOW TURN-ON/OFF POP STAND-BY MODE s t

HUF76107P3

Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Contextual Info: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

HUF76107P3

Abstract: 76107P AN7254 AN7260 AN9321 AN9322 TB334 TC298
Contextual Info: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs File Number 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

MOSFET 76107D

Abstract: 76107d TC298
Contextual Info: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

EV2200-40

Abstract: SBS 15 battery bq2040 PACK25
Contextual Info: bq2040 Gas Gauge IC With SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2040 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record