JUL2007 Search Results

604g transistor

Abstract: 606G 608G 610G KBJ604G KBJ610G
Contextual Info: LITE-ON SEMICONDUCTOR KBJ604G thru KBJ610G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 6.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic

GBJ2004

Abstract: GBJ2006 GBJ2008 GBJ2010
Contextual Info: LITE-ON SEMICONDUCTOR GBJ2004 thru GBJ2010 REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 20 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

30 MBR

Abstract: 3045CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR3030CT thru 3060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

KDXA01

Contextual Info: LITE-ON SEMICONDUCTOR Sidac High Voltage Sillicon Bidirectional Thyristors SD09A-D SERIES SIDACS 0.9 AMPERES RMS 105 thru 240 VOLTS FEATURES High pulse current capability, typ=120A/us Glass passivation insures reliable operation Compact package, T1 Package

BV 3145

Abstract: IR 4065
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

MBR20100CT

Contextual Info: LITE-ON SEMICONDUCTOR MBR2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

T4M10F-800FSS

Abstract: T4M10F-800F
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors T4M10F800FSS TRIACS 4 AMPERES RMS 800 VOLTS TO-126 FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 800 V Low Level Triggering and Holding Characteristics

Contextual Info: LITE-ON SEMICONDUCTOR GT5404~GT5408 REVERSE VOLTAGE - 400~1000 Volts FORWARD CURRENT - 3.0 Amperes GLASS PASSIVATED RECTIFIERS TO-126F FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic package has UL flammability classification

Contextual Info: SBC560 REVERSE VOLTAGE – 60Volts FORWARD CURRENT – 5 Amperes SCHOTTKY BARRIER RECTIFIER FEATURES TO-126F • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF

Contextual Info: PY263/PY264 8K X 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming High Speed – 25/35/45/55 ns Commercial – 25/35/45/55 ns (Military) Low Power Operation: – 660 mW Commercial – 770 mW Military Windowed devices for reprogramming Fully TTL Compatible Inputs and Outputs

SD1A24

Contextual Info: LITE-ON SEMICONDUCTOR Sidac High Voltage Sillicon Bidirectional Thyristors SD1A-F SERIES SIDACS 1 AMPERES RMS 120 thru 240 VOLTS FEATURES DO-201AD High pulse current capability, typ=120A/us Glass passivation insures reliable operation Max. Dynamic Holding Current -100mA

B2100

Abstract: B270 B280 B290
Contextual Info: LITE-ON SEMICONDUCTOR B270 thru B2100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 2.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction

dip-p8

Abstract: PY264
Contextual Info: PY264 8K X 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming Single 5V±10% Power Supply High Speed – 35/45/55 ns Commercial – 35/45/55 ns (Military) Windowed devices for reprogramming Low Power Operation: – 660 mW Commercial – 770 mW Military

PY264

Abstract: eprom wd224 eprom 8k 24pin
Contextual Info: PY263/PY264 8K x 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming Windowed devices for reprogramming High Speed Fully TTL Compatible Inputs and Outputs – 25/35/45/55 ns Commercial – 25/35/45/55 ns (Military) Low Power Operation: – 660 mW Commercial

marking code HFr

Contextual Info: 3.0SMCJ SERIES LITE-ON SEMICONDUCTOR Bi-Directional device is under development SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 3000 WATTS FEATURES For surface mounted applications

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 15KP SERIES REVERSE VOLTAGE - 17 to 200 Volts POWER DISSIPATION - 15000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

Contextual Info: LITE-ON SEMICONDUCTOR Sidac High Voltage Sillicon Bidirectional Thyristors SD09A-E SERIES SIDACS 0.9 AMPERES RMS 105 thru 240 VOLTS FEATURES DO-41 High pulse current capability, typ=120A/us Glass passivation insures reliable operation Max. Dynamic Holding Current -100mA

11005150

Abstract: din 7168 7168-m
Contextual Info: n DI ST LOC R E V ISIO N S p HJ LTR DESCRI PTI ON DATE R E V I S E D P E R E C O - 1 1-005150 A5 2 DWN RK 25MAR11 APVD HMR 3 Relay - bot tom v i e w 1 O -T0. 08 08 5 . 7 : 0' 3 rn 0.4 ß 2+o.is 1.2 2 - 0. 15 2 2 + 0 ' 15 - 0. 15 2 + 0 - 15 - 0. 15 ¡IM XXN.««1

S4M02-600F

Abstract: s4m02 S4M02600F s4m02 600 photoresistor LDR07 KTXD06 s4m02 600f VAK marking Thyristors 600-F
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors S4M02-600F SCRs 4 AMPERES RMS 600 VOLTS TO-126 FEATURES Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics

Contextual Info: TH I S DRAW I NG IS COPYRIGHT UNPUBLI SHED. 20 RELEASED BY TYCO ELECTRONICS F OR ALL CORPORATION PUBLICATION RIGHTS 20 LOC D I ST R E V I S I ONS RESERVED. LTR Al n - j m y 7: ^ JJ\m m \U 1j i x t « î 9 4 v - O >Ê : CONTACT TAB 2 . 5 î Ü 3. 3 S S i l

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES 5KP180C device is under development REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage

JEDEC DO-216aa

Abstract: pf 8500 DO216AA DO-216AA
Contextual Info: LITE-ON SEMICONDUCTOR LT2M SERIES STAND-OFF VOLTAGE - 5.0 to 24 Volts POWER DISSIPATION - 200 WATTS SURFACE MOUNT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS FEATURES For surface mounted applications Reliable low cost construction utilizing molded plastic