JUL07 Search Results

EQ012

Contextual Info: METRIC DO NOT SCALE DI M EN S IO N S IN mm THIRD ANGLE PROJECTION P.C.B. H O LE DIM. ¡1,6 0 D R I L L E D HOLE F I N . HOLE A F T E R REFLOW Cu -tbfc s S n P b - t h ks : 1, 39 : 1 ,3 7 ¡0 ,0 2 5 :0 ,0 0 4 ACTION PIN t O , 025 to 1 ,5 4 1 ,5 4 to 0 ,0 7 5

Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SN2100 Bluetooth Class 1 Module User Manual And Datasheet Version: 1.1 June 25, 2013 Note: SyChip, L.L.C. reserves the right to make changes in specifications at any time and without notice. The information furnished in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed

PYX28C64

Abstract: eeprom 1519B P5C164 EEPROM101
Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

BFR360L3

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II

NI USB-6221

Abstract: USB-6225 USB-6229 ni usb 6259 USB-6221 honda 20 pin connector pinout usb 6251 PCS-E68RLMD1 honda 1 pin connector pinout ni usb 6259 data sheet
Contextual Info: USER GUIDE NI USB-622x/625x OEM M Series USB-6221/6225/6229/6251/6255/6259 OEM Devices This document provides dimensions, pinouts, and information about the connectors, switch, LEDs, and chassis ground of the National Instruments USB-6221 OEM, USB-6225 OEM, USB-6229 OEM,

pin pin compatible with

Contextual Info: Philips Semiconductors Objective specification 1.25 Gbits/s Gigabit Ethernet postamplifiers TZA3044T; TZA3044U FEATURES APPLICATIONS • Pin compatible with the NE/SA5224 and NE/SA5225 but with extended power supply range and less external component count

P4C1048L

Abstract: 45cw P600
Contextual Info: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II

Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement

Contextual Info: Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement Tom Hand, Jennifer Welborn, and Jim Oerth Skyworks Solutions, 20 Sylvan Road, Woburn, MA 01801 Tom.Hand@Skyworksinc.com 781 376-3539 Keywords: … Backend Process Visual Yield Six Sigma

SE2537L

Abstract: SiGe Semiconductor SE2537L-EK1
Contextual Info: SE2537L 5 GHz Power Amplifier with Power Detector Applications Product Description ƒ ƒ The SE2537L is a 5GHz power amplifier offering high linear power for wireless LAN applications. It incorporates a power detector for closed loop monitoring and control of the output power.

bf324

Contextual Info: Philips Semiconductors Product specification PNP medium frequency transistor BF324 FEATURES PINNING • Low current max. 25 mA PIN • Low voltage (max. 30 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector • RF stages in FM front-ends in common base