CR305
Abstract: CR101 CR102 CR103 CR104 CR105 CR106 CR107 CR301 CR302
Contextual Info: DIODES INC OR PO RATE D ' _ T4 d | Efl4fl7T3 □ □ □ D E C]3 □ T ~ 'As" RECTIFIER CELLS DIODES IN CO RPORATED T4 DEgBflMflT^B D O O D a ^ | OPERATING AND STORAGE TEMPERATURE -65°C to +150°C a PK *r juAdc a PK 'fm Maximum Reverse
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cr101cr102cr103cr104+10cr105cr106crcr303fcr305fcr306fcr307cr305cr107cr301cr302
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CA102
Abstract: CR101 CR102 CR103 CR104 CR105 CR106 CR107 CR301 CR302
Contextual Info: OPERATING AND STORAGE TEMPERATURE -65°C to +150°C TYPE ' Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz *r juAdc V FM Trr a PK nS ' fm O l FM Surge Maximum Reverse Recovery Time Maximum Forward Voltage @25° C T a
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cr101cr102cr103cr104+7cr105cr106cr107cr301cr302cr303ca102
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75V 150mA Diode
Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery
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150ma1n41531n4534mil-s-19500/337+4do-34do-3502x7375v 150ma diode
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d1830
Abstract: 200F R1200 R1500 R2000 R2500 R3000
Contextual Info: ^ DIODES INCORPORATED DE | aSMSTIB DOMST! 0 7= 2-j - OS' HIGH VOLTAGE RECTIFIERS OPERATING AND STORAGE TEMPERATURE -65°C to +150°C / _ "v*' . \ TYPE Maximum ’ • Peak- • -•' • Reverse . : Voltage V . Maximum Average ' - Rectified Current @ Half-Wave —
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voltage/do-41/do-15r1200r1500+9r2000r2500di81j5cdi82qcd18300-di840cd1830200fr3000
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subminiature 5647
Abstract: UHF DETECTOR 5647 subminiature tubes
Contextual Info: SYLVA N IA fig^ . . , engineering data service 5647 QUICK REFERENCE DATA M ECHANICAL DATA B u l b . T-l B a s e .Subminiature Button Flexible Leads
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subminiature 5647uhf detector5647subminiature tubes |
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MC 9080
Abstract: klystron 2k25 2K25 2K45 reflex klystron klystron klystron 2k25 jan 2K25 klystron Bendix 6116 BENDIX reflex klystron
Contextual Info: File Catalog: Electron Tube Products Section: Microwave Tubes 6116 '*‘T&n<fpSType TK-62 REFLEX KLYSTRON T H E R M A LLY T U N E D DESCRIPTION The 6 1 1 6 (Bendix Type T K -62 ) tube is a ru g g e d iz e d low v o lta g e therm ally tuned X -b a n d reflex klystron, d e
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tk-62mc 9080klystron 2k252k25+72k45reflex klystronklystronklystron 2k25 jan2k25 klystronbendix 6116bendix reflex klystron
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1 meg ohm variable resistor
Abstract: 400C LA 4108 sylvania 57 tube subminiature tubes B5137
Contextual Info: SYLVANIA^ ^ SYLVANIA engineering data service M ECHANICAL DATA QUICK R E F E R E N C E DATA B u l b .T-3 B a s e . E8-10, Subminiature Button Flexible Leads
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e8-101 meg ohm variable resistor400cla 4108+3sylvania 57 tubesubminiature tubesb5137
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subminiature tubes
Abstract: 5641
Contextual Info: SYLYAMY W SYLVANIA engineering data service 5641 QUICK REFERENCE DATA M ECHANICAL DATA B u l b . . T-3 B a s e . E8-10, Subminiature Button Flexible Leads
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e8-1039vn0asubminiature tubes5641 |
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pentode 5899
Abstract: sm 4109 5899 tube resistor120 SM 4108 335C 400C 5899 subminiature tubes
Contextual Info: SYLVANIA SYLVANIA* engineering data service w 5899 QUICK REFERENCE DATA M ECHANICAL DATA B u l b .T-3 B a s e . E8-10, Subminiature Button Flexible Leads
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e8-10pentode 5899sm 41095899 tube+6resistor120sm 4108335c400c5899subminiature tubes
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5718 TUBE
Abstract: 5718 on 5718 BALLANTINE subminiature 5718 SM 4108 400C 450C subminiature tubes LA 4108
Contextual Info: SYLVANIA SYLVANIAjpU' engineering data service ^ M ECHANICAL DATA 5718 QUICK REFERENCE DATA B u l b .T-3 B a s e .E8-10, S u b m in ia tu re B u tto n F lex ib le L eads
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e8-105718 tube5718on 5718+7ballantinesubminiature 5718sm 4108400c450csubminiature tubesla 4108
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5719 TRIODE
Abstract: 5719 TRIODE APPLICATION 5719 tube 5719 120C 400C sm 4109 sylvania 57 tube subminiature tubes subminiature 5719
Contextual Info: SYLVANIA SYLVANIA engineering data service w 5719 QUICK REFERENCE DATA M ECHANICAL DATA T h e Prem ium Su b m in iature Type 5719 is a high mu triode designed for use in low level audio applications. It is intended for service under conditions of severe shock, vibration, high
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e8-105719 triode5719 triode application5719 tube+75719120c400csm 4109sylvania 57 tubesubminiature tubessubminiature 5719
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6112 tube
Abstract: sylvania 6112 tube SM 4108 5719 TRIODE 6112 subminiature 813 electron tube 6112 5719 TRIODE APPLICATION 400C Ecc 81 tube
Contextual Info: SYLVANIA SY1AAMV W engineering data service 6112 QUICK REFERENCE DATA MECHANICAL DATA B u l b . . T-3 B a s e . E8-10, Subm iniature B utton F lexib le L ead s
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e8-106112 tubesylvania 6112 tubesm 4108+75719 triode6112 subminiature813 electron tube61125719 triode application400cecc 81 tube
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single phase ups circuit diagram
Abstract: three phase on line ups circuit diagrams MC10802 IC LA 4138 LA 4138 000FA
Contextual Info: g MOTOROLA MC10802 Advance Information M E C L - LSI TIMING FUNCTION INTRODUCTION The M C10802 Tim ing Fun ction is an L S I building block for digital processor systems. This circuit contains the logic and control lines to generate system clock phases and provides for start, stop,
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mc10802single phase ups circuit diagramthree phase on line ups circuit diagramsic la 4138+2la 4138000fa
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Sony CXD
Abstract: CXD1088AQ sony 2192 100MIL 023p CXD1088
Contextual Info: CXD1088AQ S O N Y Over Sampling Digital Filter LSI Description Package Outline C XD1088A Q is a d ig ita l filte r LSI U nit: m m w ith q u a d ru p le d s a m p lin g ra te , d e v e lo p e d fo r c o m 4 4 pin Q FP p a ct disc p la y e r. 14.5 «•*
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cxd1088aqqfp-44p-10150milsony cxd+4sony 2192100mil023pcxd1088
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m0325
Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.
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md3250md3251mq325150madc+5m0325m-0325md3250fmd3251fmq3261
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IN5717
Abstract: IN5718 IN5714 7C3 diode IN5421
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pfcv830-cv840mv830-mv84gcv1006-16-cv1106-16+11fv1006-16fv1106-16cv1620-cv1650mv1620-mv1650cv1652-cv1666mv1652-mv1666in5717in5718in57147c3 diodein5421
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MMCM918
Abstract: MMCM930 MMT807 MMT809 MMT918 MMT930
Contextual Info: MMT809 silicon M IC R O M IN IA T U R E PNP S IL IC O N A N N U L A R T R A N S IS T O R M IC R O P O W E R S E R IE S PNP S IL IC O N A M P L IF IE R T R A N S IS T O R . . . designed fo r high-frequency, low *pow er am plifier applications. • D C C urre n t G ain @ U ltra L o w C u rre n t —
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mmt809100/tiadcmmt807mmt918+3mmcm918mmt930mmcm930
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MC1519G
Abstract: 033s MC1519 teledyne crystalonics jeled
Contextual Info: WIDEBAND DIFFERENTIAL AMPLIFIER MC1519G FEATURES • B A L A N C E D D I F F E R E N T I A L A M P L IF I E R C O N F IG U R A T I O N W ITH C O N T R O L L E D C O N S T A N T C U R R E N T SOURCE. • M O N O L IT H IC NPN IN P U T P AIR A N D M A T C H E D T H IN F IL M
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mc1519g033smc1519teledyne crystalonics+1jeled
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MD7004
Abstract: MD7004F MQ7004 0290B
Contextual Info: M D 7 0 0 4 , F s ilic o n M Q 7 0 0 4 NPN SILICON DUAL TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual high speed switches, front end detectors and temperature compensation ap plications. •
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MD708B
Abstract: VE-16V MD708 MD708A MD708AF MD708BF MD708F
Contextual Info: MD708, F silicon MD708A, AF MD708B, BF NPN SILICON ANNULAR MULTIPLE: TRANSISTORS . . . designed for use as differential amplifiers, dual high-speed switches, front end detectors and temperature com pensation ap plications. • NPN SILICON MULTIPLE TRANSISTORS
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md708md708amd708bve-16v+3md708afmd708bfmd708f
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MPSA18
Abstract: MPSA18 equivalent
Contextual Info: MPSA18* MAXIM UM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage CASE 29-04, STYLE 1 TO-92 TO-226AA Ve b O 6.5 Vdc Collector Current — Continuous 'C 200 mAdc Total Device Dissipation @ Ta = 25°C
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MD3250
Abstract: MD3250A MD3251 MD3251A MQ3251 MQ3261 m0325 M-0325 M03251
Contextual Info: M D3250,A,AF,F, MQ3251 ,A ,A F ,F , MQ3251 continued T H E R M A L C O U P LIN G AND E F F E C T IV E T H E R M A L R E S IS T A N C E In m ultiple chip devices, coupling of heat between die occurs. The junction temperature can be calculated as follows:
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md3250mq3251md3251md3250a+5md3251amq3261m0325m-0325m03251
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CD4019
Abstract: ZN 1034 ZN 1034 applications MC14519B mc1401 MC14XXXBCL MC14XXXBCP MC14XXXBD
Contextual Info: M C14519B M O T O R O L A 4-BIT AND/OR SELECTOR or L SUFFIX CERAMIC CASE 620 QUAD 2-CHANNEL DATA SELECTOR or QUAD EXCLUSIVE "NOR" GATE The MC14519B is constructed with MOS P-channel and N-channei en hancement mode devices in a monolithic structure. These complementary
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mc14519bcd4019zn 1034zn 1034 applications+4mc1401mc14xxxbclmc14xxxbcpmc14xxxbd
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scr C106
Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2
Contextual Info: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal
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x45-refscr c106c106 screquivalent scr c106+7ge scr c106ge c106f2scr c106y1ci06scr c106y1 terminalscr 406jc106b2
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