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    JSW 88 Search Results

    JSW 88 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VEB Funkwerk Erfurt

    Abstract: VEB Elrado DK-621 TSS50 ELRA RPY6 Erfurt b 7 s 3 U.FLJ
    Contextual Info: Fachbereich-Standard MC 621.385.832. S Æ jsw a an die durchf.Ste! le mit Kopie an die beauftr.ZfS der VVB-BFT B /V Elektronenröhren OSZILLOGRAPHENRÛHR3 B 7 S TGI 200-8024 3 Qmppe 3jl K1pOHHMC JIOMtlbl OciuuuurpafM M ecKcifl Entwurf August 1966 Electron


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    PDF

    Contextual Info: 1 2 3 4 5 6 SPECIFICATIONS Housing material: Positions: A 7 D E RoHS compliant Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35 1 A Pos. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Series JS-W Housing C Rev.


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    UL94V-1 6008H 6008H JS-W-6008H-1-XX PDF

    JS-W-6008-T

    Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Material: Thickness: Plating: Wire Range: Insulation O.D.: C Brass 0.2mm Tin/Gold Plating Suitable for AWG#22~28 1.7mm max C D D E E Series JS-W Pluggable Connector F Type 6008 2.54mm Pitch Style T Terminal Finish


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    JS-W-6008-T JS-W-6008-T PDF

    JS-W-6010-T-X

    Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Material: Thickness: Plating: Wire Range: Insulation O.D.: C Brass 0.2mm Tin/Gold Suitable for AWG#22~28 1.7mm max C D D E E Series JS-W Pluggable Connector F Type 6010 2.54mm Pitch Style T Terminal Finish X T=Tin


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    JS-W-60hickness: JS-W-6010-T-X JS-W-6010-T-X PDF

    JS-W-1255-T-XX

    Abstract: AWG28-32
    Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Terminal Material: Terminal Thickness: Terminal Plating: Wire Range: Insulation Resistance: A 9 Phosphor Bronze 0.15mm Tin Plated 60u”, Gold Suitable for AWG#28~32 1.00mm max. A B B C C D D E E Series JS-W Pluggable Connector


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    JS-W-1255-T-XX JS-W-1255-T-XX AWG28-32 PDF

    JS-W-1255-06-RA-XX

    Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Voltage Rating: Current Rating: Withstanding: Insulation Resistance: Temperature Range: P.C.B. Thickness: P.C.B Hole: Material: A B Pitch: Poles: 9 100V AC, DC 1A 800V AC/min. 1,000M Ohm min -25~85ºC 0.8mm ø0.5mm±0.05 Post: Brass, Tin/Plated


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    UL94V-0 JS-W-1255-06-RA-XX JS-W-1255-06-RA-XX PDF

    JS-W-6008H-2-XX

    Abstract: JSW 70 jSW 52
    Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Housing material: Positions: A A Pos. 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 C D E Series JS-W Housing RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35


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    UL94V-1 6008H 6008H JS-W-6008H-2-XX JS-W-6008H-2-XX JSW 70 jSW 52 PDF

    JS-W-6010T-XX

    Abstract: JS-W-6008H-2-XX diode js
    Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Terminal material: Terminal plating: Wire range: Insulation O.D.: Packaging: Accepts housing: A B 9 Brass, T=0.2mm Tin 60µ” or gold AWG #22-28 1.7mm max. 10,000 pcs/roll JS-W-6008H-1-XX JS-W-6008H-2-XX A B C C D D E E F Series


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    JS-W-6008H-1-XX JS-W-6008H-2-XX 6010T 6010T JS-W-6010T-XX JS-W-6010T-XX JS-W-6008H-2-XX diode js PDF

    JS-W-6008H-X-XX

    Abstract: jsw 54 jSW 52 6008H
    Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Material: Pitch: Poles: A B Pos 1 2 3 4 5 6 7 8 9 10 11 12 13 14 C D Single Row 8 A PBT, UL94V-1 2.54mm .100” 1~40 (single row) 4~80 (double row) Dimensions (single row) B Pos 15 2.54 16 5.08 17 7.62 18 10.16 19 12.70 20 15.24


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    UL94V-1 JS-W-6008H-X-XX JS-W-6008H-X-XX jsw 54 jSW 52 6008H PDF

    JS-W-1255-H-XX

    Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Material: Pitch: Poles: A 9 Nylon 66, UL94V-0 1.25mm .049” 2~15 A B B C D E F Series JS-W Pluggable Connector RoHS compliant Rev. Mounting XX ST=Straight RA=Right Angle Dimensions A B C 1.25 3.05 4.15 2.50 4.30 5.40 3.75


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    UL94V-0 JS-W-1255-H-XX JS-W-1255-H-XX PDF

    JS-W-1255-RA-XX

    Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Voltage Rating: Current Rating: Withstanding: Insulation Resistance: Temperature Range: P.C.B. Thickness: P.C.B Hole: Material: A B Pitch: Poles: C D E F Series JS-W Pluggable Connector RoHS compliant Rev. Description Date Approved


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    UL94V-0 JS-W-1255-RA-XX JS-W-1255-RA-XX PDF

    TRANSFORMER bck 03

    Abstract: transistor JSW 07 OP295
    Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable


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    0P-295/0P-495 OP-295 14-Lead TRANSFORMER bck 03 transistor JSW 07 OP295 PDF

    sony capstan motor

    Contextual Info: 1312393 GG11122 25fl SONY CX20036 Capstan Motor Drive Description The CX20036 is a bipolar 10 designed for the brushless motor drive of a 3-phase bidirectional conducting system and has the following components: Hole element amp., Conducting angle switching


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    GG11122 CX20036 CX20036 28PIN 375MIL OP-28P-L04 OP02B-P-0375-D 3B23B3 DD111HD sony capstan motor PDF

    Contextual Info: Thann Aluminum Electrolytic Capacitors CD110XM 85'c, 2ooo/hw. ttmm&. °ratt# General Small size, long life, 85"C, 2000 hours, high stability and reliability s ^ T v c D , dvd. s in . Used in VCD, DVD, big screen color-TV, air conditioning, washing machine circuits etc.


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    CD110XM) 120Hz, 10x13 10x16 10x20 16x31 13x20 PDF

    transistor JSW

    Abstract: diode JSW FL 576-K125
    Contextual Info: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM


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    6DI30M-050 E82988 l95t/R89 Shl50 transistor JSW diode JSW FL 576-K125 PDF

    Contextual Info: IDT54/74FCT139T/AT/CT FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • The ID T 5 4 /7 4 F C T 1 3 9 T /A T /C T are dual 1-of-4 decoders built using an advanced dual metal C M O S technology. These


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    IDT54/74FCT139T/AT/CT 4A25771 PDF

    tc6105

    Abstract: 2SK679 BH rn transistor 10285 TC-6105
    Contextual Info: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8


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    2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285 PDF

    Contextual Info: FAST CMOS IDT54/74FCT16841AT/BT/CT/ET 20-BIT TRANSPARENT LATCH Júáá$«#JA FEATURES: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 |j A (max.)


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    IDT54/74FCT16841AT/BT/CT/ET 20-BIT FCT16841 10-bit 841CT E56-1 PDF

    16841

    Abstract: jSw Diode UG 74 a
    Contextual Info: FAST CMOS IDT54/74FCT162841AT/BT/CT/ET 20-BIT TRANSPARENT LATCH Júáá$«#JA D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps low-powerlatchesareidealfortemporarydata storage. Theycan be used


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    IDT54/74FCT162841AT/BT/CT/ET 20-BIT 162841AT/BT/CT/ET 10-bit 841CT E56-1 16841 jSw Diode UG 74 a PDF

    Contextual Info: FAST CMOS 18-BIT REGISTER FE A T U R E S : IDT54/74FCT162823AT/BT/CT/ET D E S C R IP TIO N : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 |j A (max.)


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    18-BIT IDT54/74FCT162823AT/BT/CT/ET 250ps MIL-STD-883, 200pF, 162823AT/BT/CT/ET18-bit E56-1 823AT PDF

    Contextual Info: P R E LIM IN A R Y DATA S H E E T NEC MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2 097 152 words by 72 bits dynamic RAM module on which 9 pieces of 16M DRAM ( /xPD 4217800L) are assembled.


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    MC-422000LAB72F 72-BIT MC-422000LAB72F 4217800L) 422000AB72-60 5752s LM27555 005a3i PDF

    AN4001

    Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
    Contextual Info: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at


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    AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier PDF

    TIXXX

    Contextual Info: HIGH-SPEED 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709089S/L F ea tu re s: * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access - * * - F ast 9ns clock to data o u t in the P ipelined output m ode


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    IDT709089S/L 9/12/15ns T709089S IDT709089L 492-M TIXXX PDF

    Contextual Info: HFA3624 HARRIS S E M I C O N D U C T O R PRELIMINARY 2.4GHz RF to IF Converter October 1995 Features Description • Complete Receive/Transmit Front End The HFA3624 RF/IF converter is j I a monolithic bipolar device for / J up/down conversion applications


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    HFA3624 HFA3624 5M-1982. PDF