JSW 60 Search Results

miteq

Abstract: Waveguide
Contextual Info: JSW SERIES LOW-NOISE WAVEGUIDE AMPLIFIERS MITEQ offers a complete line of waveguide amplifiers. Listed below is a sample of MITEQ’s noise figure capabilities as a function of frequency. Various options for bandwidth, gain, noise figure, VSWR and output power are available.

Contextual Info: Motor Starting Capacitor – JSW FEATURES  Small volume, large capacitance    Low spoilage, stable capability The specific type of capacitors with high electrical characteristics are widely used in single phase A.C. motors with rated voltage of 110V-330V and the frequency of 50Hz-60Hz to

Contextual Info: Motor Starting Capacitor – JSW FEATURES Ø Small volume, large capacitance Ø Ø Ø Low spoilage, stable capability The specific type of capacitors with high electrical characteristics are widely used in single phase A.C. motors with rated voltage of 110V-330V and the frequency of 50Hz-60Hz to

miteq

Abstract: loss wr90 jsw 60
Contextual Info: JSW SERIES LOW-NOISE WAVEGUIDE AMPLIFIERS MITEQ offers a complete line of waveguide amplifiers. Listed below is a sample of MITEQʼs noise figure capabilities as a function of frequency. Various options for bandwidth, gain, noise figure, VSWR and output power are available.

VEB Funkwerk Erfurt

Abstract: VEB Elrado DK-621 TSS50 ELRA RPY6 Erfurt b 7 s 3 U.FLJ
Contextual Info: Fachbereich-Standard MC 621.385.832. S Æ jsw a an die durchf.Ste! le mit Kopie an die beauftr.ZfS der VVB-BFT B /V Elektronenröhren OSZILLOGRAPHENRÛHR3 B 7 S TGI 200-8024 3 Qmppe 3jl K1pOHHMC JIOMtlbl OciuuuurpafM M ecKcifl Entwurf August 1966 Electron

Contextual Info: NICHIA STS-DA1-1379A <Cat.No.110629> N I CH I A CORPORATI ON SPECI FI CATI ON S FOR W H I TE LED N JSW 1 7 2 T Pb-free Reflow Soldering Application Built-in ESD Protection Device RoHS Compliant NICHIA STS-DA1-1379A <Cat.No.110629> SPECIFICATIONS 1 Absolute Maximum Ratings

Contextual Info: • '• -S V 7 4 ,- - - t . F-198-1 H P T -I34-01- L -D - P A HPT -125-01 - S - D -R A T/H HOT PLU ' ■, ^W W JSw A i^e'viSM « « i? il ~ 4 t $ rv>%j?lK, ^ +'»£?'>'■ s* *bs y i. rt* v , ^ ,.4 - s' r ! * ' v * , *“ ^tw .‘ ’ S ^ r T ' K i ^ i

ocr4

Abstract: 2SD1762 transistor 2a h
Contextual Info: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o

JS-W-6008-T

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Material: Thickness: Plating: Wire Range: Insulation O.D.: C Brass 0.2mm Tin/Gold Plating Suitable for AWG#22~28 1.7mm max C D D E E Series JS-W Pluggable Connector F Type 6008 2.54mm Pitch Style T Terminal Finish

JS-W-6010-T-X

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Material: Thickness: Plating: Wire Range: Insulation O.D.: C Brass 0.2mm Tin/Gold Suitable for AWG#22~28 1.7mm max C D D E E Series JS-W Pluggable Connector F Type 6010 2.54mm Pitch Style T Terminal Finish X T=Tin

JS-W-1255-T-XX

Abstract: AWG28-32
Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Terminal Material: Terminal Thickness: Terminal Plating: Wire Range: Insulation Resistance: A 9 Phosphor Bronze 0.15mm Tin Plated 60u”, Gold Suitable for AWG#28~32 1.00mm max. A B B C C D D E E Series JS-W Pluggable Connector

JS-W-6010T-XX

Abstract: JS-W-6008H-2-XX diode js
Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Terminal material: Terminal plating: Wire range: Insulation O.D.: Packaging: Accepts housing: A B 9 Brass, T=0.2mm Tin 60µ” or gold AWG #22-28 1.7mm max. 10,000 pcs/roll JS-W-6008H-1-XX JS-W-6008H-2-XX A B C C D D E E F Series

Contextual Info: 1 2 3 4 5 6 SPECIFICATIONS Housing material: Positions: A 7 D E RoHS compliant Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35 1 A Pos. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Series JS-W Housing C Rev.

JS-W-6008H-2-XX

Abstract: JSW 70 jSW 52
Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Housing material: Positions: A A Pos. 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 C D E Series JS-W Housing RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35

Contextual Info: CAGE CLAMfS CONNECTION 0.08 - 2.5 mm2 1000 V /8 kV/3 24 A 1000 V /8 kV/3 24 A 0.08 - 2.5 mm 400 V /6 kV/3 24 A Terminal block width 5 mm / 0.197 in i_ ^ 8 - 9 mm / 0.33 in Terminal block width 5 mm / 0.197 in 1_ ^ B - 9 mm / 0.33 in Terminal block width 5 mm / 0.197 in

marking 606

Contextual Info: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed

Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN

ECG1072

Contextual Info: PHILIPS E C G IN C 17E ^ 53^20 U T-77-05-07 E C G 1072 FM/AM-IF AMPLIFIER AND AUDIO AMPLIFIER Outline Drawing U n it: m m 0 .8 1 min. The ECG1072 ft a monolithic Integrated circuit designed as an F M /A M -IF amplifier and audio amplifier for portable radio sets.

TL496

Abstract: SSIF
Contextual Info: — 240 T L — 4 9 6 -> u — X ' / T . ' f ' y U ^ r' n — ? 9 v m f j< D -> '] — v * - y v • u *r O .V - ? x \ xtrnuift' 1.i v h 3 . 0 V < D ¿ í , í + W t 3 5 IS , < D = > ^ A t n v í y t t X f , - / ' / , - / ■ x - f y ^ V y ■ £ L T » ftN -% . Î / U - X - l ' i l U— ?7i>r, x-i

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

JSW2-63DR

Contextual Info: SPDT RF Switch 50Ω JSW2-63DR+ 10 to 6000 MHz The Big Deal • Single Positive Supply Voltage • Medium Power P0.1dB, 2.8W • Low Insertion Loss, 0.33 dB at 1 GHz CASE STYLE: MT1818 Product Overview JSW2-63DR+ is a medium-power reflective SPDT RF switch, with reflective short on output ports in the

Contextual Info: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.

TRANSFORMER bck 03

Abstract: transistor JSW 07 OP295
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable

jSw Diode

Contextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage