JSP DIODE Search Results

SPMB50A500

Contextual Info: SPMB50A500 CrSiGconix in c o r p o r a te d Power MOSFET Module PRODUCT SUMMARY V BR DSS 500 '"JSP •d V ISOL (A) (V) 50 2500 0.100 3 9 D1 FEATURES: APPLICATIONS: • • • • • • • • • • • 4 G1 O— Half-bridge Circuit Fast Intrinsic Diode (270 ns)

BYV40

Abstract: BYV40E SC18
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV40E series FEATURES SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability

smd jsp

Abstract: 20CT BYV116 PBYR225CT SC18 smd diode A1 1466 diode smd jsp 33
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored charge. These

20CT

Abstract: BYV116 PBYR225CT SC18 BYV116 25
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR225CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting

BYV40

Abstract: SC18 SMD footprint design
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,

Contextual Info: Product specification Philips Semiconductors Rectifier diodes PBYR245CT series Schottky FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching • Reverse surge capability

Contextual Info: DISCRETE SEMICONDUCTORS DAT BYV40E series Rectifier diodes ultrafast, rugged Product specification September 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYV40E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V

PBYR245CT

Abstract: SC18
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR245CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting

PBYR245CT

Abstract: SC18 JSP DIODE
Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BYV40E series Rectifier diodes ultrafast, rugged Product specification September 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYV40E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V

MSB003

Abstract: PMV213SN
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

PMEG3020ER

Abstract: SOD-128
Contextual Info: AN10808 Thermal consideration of NXP FlatPower MEGA Schottky barrier rectifiers - Selection criteria Rev. 1 — 29 June 2010 Application note Document information Info Content Keywords FlatPower MEGA Schottky barrier rectifiers, thermal consideration, selection criteria

MSA435

Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Contextual Info: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.

MSA435

Abstract: BAS32L
Contextual Info: BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.

PMV213SN

Abstract: PMV213
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

BAS21H

Abstract: MARKING JSp
Contextual Info: BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic package.

di292

Abstract: pj 26 diode MJ-05 ci3022 ci470 SCM30 ci573 CMOS spice model di2910 RI57
Contextual Info: Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:

smd diode a7

Abstract: smd jsp SMD a7 S BAV99 SOT 23 smd diode marking A7 SOT-23 JSP SMD JSp SOT23 bav99 sot-23 smd transistor A7 Diode BAV99 SOT23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking BAV99 = A7 High-Speed Switching Series Diode Pair

pj 59

Abstract: PJ216 pj 26 diode PJ 75 PJ 67 PJ 74 PJ-25 ci3015 pj 84 pj 50 diode
Contextual Info: fax id: 5113 Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:

di292

Abstract: CMOS spice model ci470 CI573 pj 26 diode i2931 di640 ci547 RI57 W1-300
Contextual Info: Spice Models for HOTLink spect to ground. Pin VGND should be connected to InputBuff Operation Guide system ground. Overview Pin A is the modeled input pin. The TTLinput buffĆ This memo responds to customer requests for a er is valid for all of the TTL inputs on the

Contextual Info: Philips Semiconductors Productspecification BAS19; BAS20; BAS21 General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns MARKING PINNING MARKING CODE TYPE NUMBER PIN 1 DESCRIPTION anode • General application BAS19 JPp

Contextual Info: Philips Sem iconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current

diode sy 171 10

Abstract: diode sy 170/10
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,

PHT6NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHT6NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 6.5 A g