JS 8017 Search Results

js 8017

Abstract: RQW 130 8017M ICL8017 8017C ICL8017C ICL8017M schematic diagram closed loop control temperature rqw 200
Contextual Info: ICL 8 0 1 7 High Speed Inverting A m plifier QlMTOFm FEATURES APPLICATIONS • • • • • • • • • 130 V//JS Slew Rate Fast Settling Time 50 nA Input Current 10 MHz Bandwidth Simple Frequency Compensation Short Circuit Protection High Speed Inverting Am plifier

cl8017

Abstract: js 8017 8017M ICL8017 ic ICL8017 ICL8017C ICL8017M so25 schematic diagram closed loop control temperature
Contextual Info: ICL8017 High Speed Inverting A m plifier FEATURES • • • • • • APPLICATIONS 130 V // js Slew Rate Fast S ettling Tim e 50 n A In p u t Current 10 MHz B andw idth Sim ple Frequency Compensation S hort C ircu it P rotection • • • • • •

mar z

Abstract: siemens ha 8000
Contextual Info: S IE M E N S CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for

CFY66

Abstract: CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P Siemens Microwave 35 micro-X Package MARKING CODE Q 35 micro-X Package MARKING CODE 0
Contextual Info: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • 4 3 1 2 Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz

low noise hemt

Abstract: 35 micro-X Package MARKING CODE Q igp 0830 CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P
Contextual Info: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz

Contextual Info: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz

Contextual Info: S IE M E N S CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •

marking code s22

Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

GM15

Abstract: 137 marking Micro-X
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

35 micro-X Package MARKING CODE Q

Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

35 micro-X Package MARKING CODE Q

Abstract: CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P HEMT marking P CFY67-08P P
Contextual Info: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package

THYRISTOR sct 280 04

Abstract: 80173-111-01 80173-111-01 hp 2521 MITSUBISHI GATE COMMUTATED GU-D04 THYRISTOR MAR 615 hp 2521 CS thyristor cs 6-25 FGO100A-130DS FGC400A-130DS GCU04AA-130
Contextual Info: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE 6. GCT PART Type name: FGGM0A-13ÖDS (l)MAXIMÜM RATINGS_ No CONDITIONS SYMBOL Repetitive peak reverse voltage VOLTAGE UNIT 6500 V

Micro-X Marking 865

Abstract: GaAs Amplifier Micro-X Marking 865 CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P
Contextual Info: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package

HEMT marking P

Contextual Info: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •

micro-X Package MARKING CODE C

Abstract: 137 marking Micro-X 78 D 56
Contextual Info: S IE M E N S CFY25 HiReIX-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

Micro-X Marking 865

Contextual Info: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package

Micro-X marking "K"

Abstract: micro-X Package MARKING CODE C
Contextual Info: CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power

S 0273 SIEMENS

Abstract: CFY25-20 CFY27 CFY27-38 CFY27-P 1216 Siemens
Contextual Info: CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power

0280 130 026

Abstract: CFY27 CFY27-38 CFY27-P CFY25-20 TBC 547 B 35 micro-X Package MARKING CODE Q
Contextual Info: CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power

TCP 8126

Abstract: uart 8017 cs 8502 COM8502 js 8017 RPE13
Contextual Info: COM 8017 COM 8502 Universal Asynchronous Receiver/Transmitter UART Pin Configuration FEATURES □ Single +5V Power Supply □ Direct TTL Compatibility— no interfacing circuits required □ Full or Half Duplex Operation — can receive and transmit simultaneously at different baud rates

s5D transistor

Abstract: TLP802 TLP-802
Contextual Info: TLP802 INFRARED LED + PHOTO TRANSISTOR TLP802 U nit in mm TIMING SENSOR EDGE SENSOR I in, POSITION AND ROTATION SENSOR TLP802 is a high speed position detecting type photo interrupter with a wide detecting groove width • High detecting accuracy • Wide detecting gap

Micro-X marking "K"

Abstract: micro-X Package MARKING CODE C
Contextual Info: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power

Contextual Info: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power

35 micro-X Package MARKING CODE Q

Abstract: BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package