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    JS 8017 Search Results

    JS 8017 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    86380-170HLF
    Amphenol Communications Solutions BERGSTIK II DR STRAIGHT-RET PDF
    77313-801-70LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Header, 2.54 mm Pitch, Vertical, Double Row,Through Hole, 70 Positions PDF
    89588-017LF
    Amphenol Communications Solutions Dubox® 2.54mm, Board to Board Connector, PCB Mounted Receptacle, Vertical, Through Hole, Top Entry, Double Row, 34 Position ,2.54mm (0.100in) Pitch. PDF
    86380-172HLF
    Amphenol Communications Solutions BERGSTIK II DR STRAIGHT-RET PDF
    75844-801-72LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Double Row, 72 Positions, 2.54mm (0.100in) Pitch. PDF

    JS 8017 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cl8017

    Abstract: js 8017 8017M ICL8017 ic ICL8017 ICL8017C ICL8017M so25 schematic diagram closed loop control temperature
    Contextual Info: ICL8017 High Speed Inverting A m plifier FEATURES • • • • • • APPLICATIONS 130 V // js Slew Rate Fast S ettling Tim e 50 n A In p u t Current 10 MHz B andw idth Sim ple Frequency Compensation S hort C ircu it P rotection • • • • • •


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    ICL8017 cl8017 js 8017 8017M ic ICL8017 ICL8017C ICL8017M so25 schematic diagram closed loop control temperature PDF

    mar z

    Abstract: siemens ha 8000
    Contextual Info: S IE M E N S CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for


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    CLY38 CLY38-00 CLY38-05 CLY38-10 MWP-35 CLY38-nn: QS9000 mar z siemens ha 8000 PDF

    Micro-X Marking 865

    Contextual Info: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


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    CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: QS9000 Micro-X Marking 865 PDF

    s5D transistor

    Abstract: TLP802 TLP-802
    Contextual Info: TLP802 INFRARED LED + PHOTO TRANSISTOR TLP802 U nit in mm TIMING SENSOR EDGE SENSOR I in, POSITION AND ROTATION SENSOR TLP802 is a high speed position detecting type photo interrupter with a wide detecting groove width • High detecting accuracy • Wide detecting gap


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    TLP802 TLP802) TLP802 b9EbT00 s5D transistor TLP-802 PDF

    Micro-X marking "K"

    Abstract: micro-X Package MARKING CODE C
    Contextual Info: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power


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    CFY27 CFY27-38 CFY27-P CFY27-nnl: QS9000 Micro-X marking "K" micro-X Package MARKING CODE C PDF

    35 micro-X Package MARKING CODE Q

    Abstract: BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"
    Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package


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    BFY420 QS9000 35 micro-X Package MARKING CODE Q BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K" PDF

    BFY405

    Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
    Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


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    BFY405 QS9000 BFY405 Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K" PDF

    2N7002DM

    Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
    Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)


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    P4M266 LTC17D9-9 N355V1 33VSB 2N7002DM kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252 PDF

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


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    CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10 PDF

    CLX34

    Abstract: CLX34-00 CLX34-05 CLX34-10
    Contextual Info: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • • • Low thermal resistance for high voltage application


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    CLX34 CLX34-00 CLX34-05 MWP-25 CLX34-10 CLX34-nn: QS9000 CLX34 CLX34-00 CLX34-05 CLX34-10 PDF

    CLY35

    Abstract: CLY35-00 CLY35-05 CLY35-10 0244
    Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


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    CLY35 CLY35-00 MWP-35 CLY35-05 CLY35-10 CLY35-nn: QS9000 CLY35 CLY35-00 CLY35-05 CLY35-10 0244 PDF

    RF TRANSISTOR NPN MICRO-X

    Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


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    BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X PDF

    PH ON 823 m 0233

    Abstract: marking code PH 817
    Contextual Info: S IE M E N S CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for


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    CLY35 CLY35-00 CLY35-05 CLY35-10 MWP-35 CLY35-nn: QS9000 PH ON 823 m 0233 marking code PH 817 PDF

    CLX27

    Abstract: CLX27-00 CLX27-05 CLX27-10
    Contextual Info: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


    Original
    CLX27 CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27-nn: QS9000 CLX27 CLX27-00 CLX27-05 CLX27-10 PDF

    siemens Pm 90 87

    Abstract: PC 3131
    Contextual Info: S IE M E N S CLX34 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for


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    CLX34 CLX34-00 CLX34-05 CLX34-10 MWP-25 CLX34-nn: QS9000 siemens Pm 90 87 PC 3131 PDF

    rfsemi

    Contextual Info: S IE M E N S CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for


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    CLY29 CLY29-00 CLY29-05 CLY29-10 MWP-25 CLY29-nn: QS9000 rfsemi PDF

    AD8017

    Contextual Info: Dual High Output Current, High Speed Amplifier AD8017 ANALOG DEVICES FEATURES High O utput Drive Capability 20 V p-p Differential O utput V oltage, RL = 50 10 V p-p Single-Ended O utput V oltage W hile Delivering 200 mA to a 25 Load Low Power Operation +5 V to +12 V V oltage Supply @ 7 m A /A m plifier


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    AD8017 AD8017 PDF