JS 2617 Search Results

SP10T

Abstract: PE7160
Contextual Info: .1470 THRU 4 HDLES .2 5 0 .31 0 1.5000 .3 1 0 COM POS 1 SCHEMATIC SHOWN WITH ALL PORTS OPEN POS 2 POS 3 POS 4 POS 5 POS 6 POS 7 POS 8 POS 9 LJ U S U S U r‘ S POS 10 L JS 10 SPECIFICATIONS SWITCH TYPE: SP10T CONNECTOR TYPE: SMA FREQUENCY RANGE: DC TO 8 GHz

ic SE 135

Abstract: 00jT K49H
Contextual Info: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •

cd 1619 CP fm radio

Abstract: RBS 2206 UAA 1006 cd 1619 CP fm radio RECEIVER NVR 1550 UAA 1004 DP utc 2411 RBS 2302 RBS 2204 ECU 206 7.4.5
Contextual Info: MOTOROLA Order th is document as AN495/D SEMICONDUCTOR APPLICATION NOTE AN495/D RDS decoding for an HC11 -controlled radio P. Topping, Motorola Ltd, East Kilbride, Scotland Introduction This application note describes, and lists the software of, the RDS aspects of the HC11 radio controller described

OHMITE 4854

Abstract: ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803
Contextual Info: OHM ITE Cross Reference Manufacturing Company Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. 0101 0102 0102A 0103 0103A 0104 0105 0106 0107 0108 0109 0110 0111 0112 0113 0113A 0114 0114A 0115

2SA1652

Abstract: TC-7931
Contextual Info: y 1; : i > / n° * 7 — S ilico n Pow er T ra n sistor P N P i t 0^ ^ y 7 ; ^ y U =i > I lffl mm 2SA1652«, Ü i t ; W ' y 5 L> '? 'f f l? '= lU ? £ - li- y ^ P a ] fiJW m B E ^ C / Jv ê < 4 « J : ? I B « 3 n Æ :E-;u K /'C '7 - ^ ÎÉ 4.7 MAX. 10.5 MAX.

2SK2133

Abstract: 2SK2133-Z MP-25 MP-25Z CMT-10
Contextual Info: zr— 'i? NEC ^ • £ /— h M O S ^ -^ 5 e j!j^ /\0r7 - M O S FET M O S Field E ffect P o w e r T ran sistors 2SK2133, 2SK2133-Z N ^ Ÿ T W U /x V -M O S f e t i t f f l 2SK 2133, 2 S K 2 1 3 3 -Z l i N i t :Ê . 7 , < i 7 - MOS FET T 't T * ' U ¡Ü IS

TC7988

Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y

OX36D-S-MR-R

Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Contextual Info: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing

j329

Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Contextual Info: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo

D17012GF

Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
Contextual Info: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if

transistor C 2615

Abstract: bu526 js 2617 BF56 marking EAAT transistor 526
Contextual Info: L I _-— - ^ 17E D TELEFUNKEN ELECTRONIC • Ô ^ O O R b DQ0tm'7S 4 . THIUIIFTOKIMI electronic BU 526 Crtalrv« Tèchnotogtç* r-3 3 -1 3 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In tripple diffusion technique

2SD1005

Abstract: b10 lek 2SB804 2SD100
Contextual Info: Silicon T ra n s is to r 2SD1005 f t W-MWÌ $ W i : mm 0 7 |-— t V o 2SB804 i 3 > 7° IJ y > ^ 'J Titm T" l ^ t . o ë ‘x > i f t i Î Œ, iHjhF'E ”(?~'f~0 PT = 2.0 W (0.7 mmX 16 cm2- t e 7 Ì VCEo > 80 V, hFE = 200 TYP. (Ic = 100 mA) »& -9 - ^ î _ x pBH Œ

2SD1000

Abstract: IC HE 4011 2SB799 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor
Contextual Info: ?— S • Ss— H Silicon T ra n s is to r 2SD1000 o - t — r 'A * T > m m m i •mm - 7 °m < T ) K 7 4 2 S B 7 9 9 ¿ 3 yy°') ? 'jr f È f f l e '# ti~0 O/J'A^’C P t ^ '^ ^ ^ > ¡ftiiŒ T 'i) < 5o 1.5+0.1 p m = 2 .0 m w ± 0 .7 mmX Il 3 U 7 y W 3

Contextual Info: 16 15 14 13 11 12 8 10 SYMBOL D E F IN IT IO N M IS S IN G A D I M E N S I O N WITHOUT AN I N S P E C T I O N R EPO RT SYM BO L D O ES NOT R E Q U I R E I N S P E C T I O N . I T MAY BE CO N TRO LLED ON THE I N D I V I D U A L COMPONENT DRAWING. M TOTAL NO OF

2SJ328

Abstract: 2SJ328-Z J0502
Contextual Info: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,

IC-8857

Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
Contextual Info: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o

2sk1150

Abstract: b 772 my1 PS7K 2SK 1411 t8506
Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .

Philips PCF 7900

Abstract: BI 170-1-2 PD72256 fdk vco 004 tfk 522 IC HEF 4541 PCF 7900 himax hx DXJR dk737
Contextual Info: M o s jfc ü m ïê MOS Integrateci Circuit M FM , M W P ,L W D f ^ 1 - t { M 7 W 1 2 G F - 5 1 m P L L J l i 6 i è v > i r 1 t ' f I f • £> < ££> ':□ > h P - 7 / iP D 1 7 0 1 2 G F - 0 5 1 Ì^ tì# ^ W P L L |Ì]> ^ '> > - b - y - < 1 f^ F M MW, L W ^ zl

molex mxj 2g

Contextual Info: Z £ -rX M Z £ 0 D I 0-N3 's h 25.7 25.2 24.7 24.2 23.7 23.2 22.7 22.2 21.7 21.2 20.7 20.2 19.7 19.2 18.7 18.2 17.7 17.2 16.7 16.2 15.7 15.2 14.7 14.2 13.7 13.2 12.7 12.2 11.7 11.2 10.7 10.2 9.7 9.2 8.7 D 0.5(N- I)}" NAIL BOTTOM 0.5(N+ I)" VIEW 0.5(N+ I)

e5es

Abstract: IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7
Contextual Info: r M OS Integrated Circuit /¿PD17P402 * t i t ^ m 4 fcf'y N • •v - f ? □ = ] > h P - 7 /¿PD17P402 i, /¿PD17402£>P^VX?ROM £, 7 > • £ < A P R O M T 'B £ & tL* I«K i T T o fi P D17P402 « , 7 P 7 A 0 W # Jt £ / jP D 1 7 P 4 0 2 C 7 3 ^ ^ t4 (fc jg fc S ftftif) l i ,

js 2617

Abstract: mxj 5 connector
Contextual Info: Z £ -rX M Z £ 0 D I 0-N3 's h 2 5. 7 24.9 20.65 19.5 2 5. 2 2 4. 4 20. 15 19.0 2 4. 7 23.9 19.65 18.5 2 4. 2 2 3. 4 19.15 18.0 2 3. 7 22.9 18.65 17.5 2 3. 2 2 2. 4 18.15 17.0 - 3517 35 21.9 17.65 16.5 - 3 4 17 34 2 2. 7 0. 5(N- I)}" NAIL BOTTOM 0. 5( N+ I)"

Contextual Info: Product Data Sheet SDW82F1C – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series SDW82F1C CRI80 LM-80 RoHS MacAdam 3-Step Product Brief Description Features and Benefits • The ZC series are LED arrays which provide

NEC C959

Abstract: 7KIP C959 2SD1701 PA33 T092 Nec b 616 n471 TN59
Contextual Info: '> > ; = ] > Y = ÿ > i> 7 .^ S ilic o n T r a n s is to r 2SD1701 41 m i t 800 m A Î t ' W f l h F E f ^ ^ & « s ìè t t o y — ± : mm 5.2 MAX. h Y 7 4 7" 'J > F > f ê W o Î É V CE (s a t)T "to i ( t a = 25 ° c) a »& s -f- S Ÿ§- -¥• \ÎL

SK FN 521

Abstract: 2SA1897 T-100 paps7k V/SK FN 521
Contextual Info: 5ë'fr%-R H u ttifa fp 0|D July 1993 M 1 "sj O *vj m *□ V; w> -* ít Si' ü 1 V >4 v> di V' ü A Si % Vf m 111 V m lin üsf 8$ St * fr H (Q .H •n ~ü H H m Vf Vi- m Püf V. m üf Vi o" Ttr D 1 5o o H s: o" o o H o 11 ro Ül H °Il en H o II IIA N) ^ en