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jrma

Contextual Info: TK11042 Power Conversion ICs TEMPERATURE SENSOR IC FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Linear Output Voltage 6 mV/°C Output 2.7 to 10.0 Volt Supply Range Miniature Package SOT-25 Minimum External Parts Count Low Power Consumption

Contextual Info: 10 N - I 10-' | ±0.1 (0 -6 ) CONNECTOR PO SITIO N / J J J J \ - I 1 % L 1.65 RECOMMENDED PATTERN DIM.(REF.) 1 D J . 1 I I (3.5) s T T /f T IYI I M IYI I 1/ / 7~ A f it t in g 3 8 .7 3 4 ./ 33. / 3 2 ./ 3 1 ./ 30. / 29. / 2 8 ./ 2 /./ 2 6 ./ 2 5 ./ 2 4 ./

Contextual Info: 8253922 SILICON SENSORS-INC 39G SILICON SENSORS INC 00239 V T-41-73 •D r 3 ^ 1 J f l 5SBTaa □□□053ci SILICON SENSORS, I ü Highway 18’East'; L Dodgeville, Wiscorïèin 53533 Telephone: 608-935-2707 TWX:910-280-1430; | ; • . ,.I25 DIA. 2 PLS.

MRF580

Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Contextual Info: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.

2SK1505-MR

Abstract: a2213
Contextual Info: 2SK1 505-M R F U JI po w er m o s -f e t N-C HANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • Hiyh current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications : • Motor controllers

Contextual Info: M M O T O R O LA • -»— »». MC14C89B, AB Quad Low Power Line Receivers The MC14C89B and MC14C89AB are low monolithic quad line receivers using bipolar technology, which conform to the E IA -2 3 2 -E , E IA -562 and C CITT V.28 Recom mendations. The outputs feature LSTTL and CMOS

Contextual Info: ADSP-2111 March 1990 For current information contact Analog Devices at 617 461-3881 FEATURES 77 ns Instruction Cycle with Sustained 13 MIPS Performance 100-Pin PGA and 100-Lead PQFP ANALOG DEVICES This information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices

mosfet v0

Contextual Info: 2SK960-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hhjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi(|h voltage ■Applications • Switching regulators

succesive approximation ADC

Abstract: Bin2BCD10 bcd binary conversion application note Z86CCP00ZEM CHANNEL21 Z86CCP curtis 803 AN004001-Z8X0400
Contextual Info: Application Note Analog-to-Digital Conversion Techniques Using ZiLOG Z8 MCUs AN004001-Z8X0400 ZILOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ WWW.ZILOG.COM Application Note Analog-to-Digital Conversion Techniques Using ZiLOG Z8 MCUs

Contextual Info: • 5-ñ B JK ft I 60630PS DATE REV. 'ON ON IMVHQ • DCN W. W. NO. & 2 11 .A p r . 1995 35787 ADDED SPECIAL 3 26.Apr.1999 43870 ADDED NOTE 4 27.Deo.2004 056458 ADDED IT EM S m m 1 DESCRIPTIO N dr CONTROL IT EM 3 eto . . $ üé m & u APPD. APPD. CHK. M.OOWA

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

M34510E8SP

Contextual Info: MITSUBISHI MICROCOMPUTERS 4510 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • The 4510 Group is a 4-bit single-chip m icrocom puter de ­ signed with CMOS technology. Its CPU is that of the 4500 series using a simple, high-speed instruction set. The com ­

QM10

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75

ls 2533

Contextual Info: m 3ÔE D INTEGRATED DEVICE 4Ô2S771 00053=13 T Q IDT IDT29FCT52A/B/C IDT29FCT53A/B/C FAST CMOS OCTAL REGISTERED TRANSCEIVERS 3 \ Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Equivalent to AM D’s Am2952/53 and National’s 29F52/53 in pinout/function