JQ1 35 Search Results

Contextual Info: 31*}1 3423 98?0: :05,@ 1DAOPMDN U 6;A koal[`af_ [YhYZadalq U 73:cU \a]d][lja[ klj]f_l` .Z]lo]]f [gad Yf\ [gflY[lk/ U OYf]d egmfl1 nYjagmk l]jeafYd lqh]k U Efnajgfe]flYd ^ja]f\dq hjg\m[l .QgHR [gehdaYfl/ U Nmldaf] Dae]fkagfk? .9<35 p 8735 p 7=3:/ee Fad] Mg3?E689:6<

K3067

Contextual Info: 53,+3 .>955/ 5645 ;:A2< <27.B 3FCQROFP X 7:A koal[`af_ [YhYZadalq X 7cU \a]d][lja[ klj]f_l` Fad] Mg3?E689:6< .Z]lo]]f [gad Yf\ [gflY[lk/ X OYf]d egmfl1 nYjagmk l]jeafYd lqh]k X Efnajgfe]flYd ^ja]f\dq hjg\m[l .QgHR [gehdaYfl/ X Nmldaf] Dae]fkagfk? .9<35 p 8735 p 7=3:/ ee

2A-24

Abstract: TIRN69556 t539 9F26 7555P CG31 9F29
Contextual Info: 31*}1 .=955/ 3423 98?0: :05,@ 1DAOPMDN V 6;A koal[`af_ [YhYZadalq V 73:cU \a]d][lja[ klj]f_l` .Z]lo]]f [gad Yf\ [gflY[lk/ V OYf]d egmfl1 nYjagmk l]jeafYd lqh]k V Efnajgfe]flYd ^ja]f\dq hjg\m[l .QgHR [gehdaYfl/ V Nmldaf] Dae]fkagfk? .9<35 p 8735 p 7=3:/ee Fad] Mg3?E689:6<

mc 5357

Abstract: 8a17 YC 637 smjq 7555P 6A17
Contextual Info: 53,+3 5645 ;:A2< <27.B 3FCQROFP W 7:A koal[`af_ [YhYZadalq W 7cU \a]d][lja[ klj]f_l` .Z]lo]]f [gad Yf\ [gflY[lk/ W OYf]d egmfl1 nYjagmk l]jeafYd lqh]k W Efnajgfe]flYd ^ja]f\dq hjg\m[l .QgHR [gehdaYfl/ W Nmldaf] Dae]fkagfk? .9<35 p 8735 p 7=3:/ ee Fad] Mg3?E689:6<

c455

Abstract: FC117 FC118 FC119 FC120 FC139 FC140
Contextual Info: 5 / 6 - P i n CPs FC S e r i e s 1 The Sanyo 5/6-pin chip packs are small-sized packages that facilitate higher-densi ty mounting. We have various packings that meet automatic mounting requirements. afo Transistors for HF,LF Amp General-purpose Amp, Differential Amp Applications

6755U

Abstract: GGK 85A HF8 AJ T-538
Contextual Info: 1/|}/ 4252*:;8. 1201 76=.8 8.3*> /B?LMJBK R 85A koal[`af_ [YhYZadalq Fad] Mg3?E689:6< R <5A oal`klYf\k afjmk` [mjj]fl < - . R SU26: /Yl 675UAC0 YnYadYZd] R 6 Fgje A [gf^a_mjYlagf Fad] Mg3?9557:8<= R Efnajgfe]flYd ^ja]f\dq hjg\m[l /QgHR [gehdaYfl0 R Nmldaf] Dae]fkagfk? /8:37 p 8737 p 79350 ee

ld18a

Contextual Info: QFET N-CHANNEL FQP4N20L FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 7.0nC Typ. • Extended Safe Operating Area

6755U

Abstract: HF8 AJ
Contextual Info: 1/|}/ 4252*:;8. 1201 76=.8 8.3*> /B?LMJBK R 85A koal[`af_ [YhYZadalq Fad] Mg3?E689:6< R <5A oal`klYf\k afjmk` [mjj]fl < - . R SU26: /Yl 675UAC0 YnYadYZd] R 6 Fgje A [gf^a_mjYlagf Fad] Mg3? 9557:8<= R Efnajgfe]flYd ^ja]f\dq hjg\m[l /QgHR [gehdaYfl0 R Nmldaf] Dae]fkagfk? /8:37 p 8737 p 79350 ee

6755U

Contextual Info: 1/|}/ 4252*:;8. 1201 76=.8 8.3*> /B?LMJBK R 85A koal[`af_ [YhYZadalq Fad] Mg3?E689:6< R <5A oal`klYf\k afjmk` [mjj]fl < - . R SU26: /Yl 675UAC0 YnYadYZd] R 6 Fgje A [gf^a_mjYlagf Fad] Mg3?9557:8<= R Efnajgfe]flYd ^ja]f\dq hjg\m[l /QgHR [gehdaYfl0 R Nmldaf] Dae]fkagfk? /8:37 p 8737 p 79350 ee

FGJ 53

Contextual Info: ?054@E >490E 750. z>490E C8@7 5<>2819E 6A8343 2<;@02@?{ 5IFSTQIR _ Lmdla [gflY[l YjjYf_]e]flk? :MN06MC1 9MN07MC1 8MN08MC _ Fgj[aZdq _ma\]\ [gflY[lk Y[[gj\af_ lg EM:575: _ ;A koal[`af_ [YhYZadalq _ Kgo afhml hgo]j? :55eV _ Ha_` afkmdYlagf [YhYZadalq? 65cU kmj_] ngdlY_]

Q855

Abstract: B855
Contextual Info: 31~*1 ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1DANOLDM T :A koal[`af_ [YhYZadalq T 65cU aehmdk] oal`klYf\ ngdlY_] .Z]lo]]f [gad Yf\ [gflY[lk/ T Sqh] 7 e]]lk UDE 5<551 5;86 j]af^gj[] afkmdYlagf T Ha_`dq ]^^a[a]fl eY_f]la[ [aj[mal ^gj `a_` k]fkalanalq? 755eV T Eplj]e]dq keYdd ^gglhjafl mladaraf_ OCB Yj]Y

GJ 96

Abstract: v539 71051 G 655E
Contextual Info: 42*+2{3 <>.7585-=>;1 58=1;7105-=1 :9@1; ;16-A 2EBOPMEN U 65A koal[`af_ [YhYZadalq U 65cU aehmdk] oal`klYf\ ngdlY_] .Z]lo]]f [gad Yf\ [gflY[lk/ U Sqh] 7 e]]lk UDE 5<551 5;86 j]af^gj[] afkmdYlagf U Ha_`dq ]^^a[a]fl eY_f]la[ [aj[mal ^gj `a_` k]fkalanalq? 755eV

LT 6536

Contextual Info: 1/-|zy-|z* 9;+4252*:;8. 9205*3 8.3*? /C@LMJCK Fad] Mg3? E6889=6 V :A koal[`af_ [YhYZadalq V 6 Fgje C [gf^a_mjYlagf V RlYf\Yj\ OCB dYqgml Fad] Mg3? Q:57;:95> /Nfdq HF D96A0 V OdYkla[ k]Yd]\ Yf\ ^dmp hjgg^]\ lqh]k YnYadYZd] V TK afkmdYlagf kqkl]e? CdYkk F YnYadYZd]

Contextual Info: 1/-|zy-|z* 9;+4252*:;8. 9205*3 8.3*> /B?LMJBK U :A koal[`af_ [YhYZadalq U 6 Fgje C [gf^a_mjYlagf U RlYf\Yj\ OCB dYqgml U OdYkla[ k]Yd]\ Yf\ ^dmp hjgg^]\ lqh]k YnYadYZd] Fad] Mg3?E6889=6 U TK afkmdYlagf kqkl]e? CdYkk F YnYadYZd] U Efnajgfe]flYd ^ja]f\dq hjg\m[l /QgHR [gehdaYfl0

02A4

Abstract: A02A YIQN69556YNHQAQ6
Contextual Info: 759D}@7 3=B1:4 ;094 2=<A02A 0BA=;=A8C4 ?4:0E 5IFSTQIR \ QeYdd kar] \ DgmZd] MN [gflY[lk \ QlYf\Yj\ l]jeafYd hal[` ]ehdgq]\ \ Epl]f\]\ gh]jYlagf jYf_] \ UYk` la_`l lqh] YnYadYZd] AVPKGFL 0PPLKGFSKONR \ PgHQ - EKT [gehdaYfl C]fljYd \ggj dg[c1 Afla2l`]^l dg[c1 Ka_`laf_ [gfljgd

2N6783

Contextual Info: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 2N6783 JTX, JTXV 2N6784 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

BJ 938

Abstract: LQH6c 7B339 MJN7
Contextual Info: 648: /A@<:<@7B3 >39/D 4IFSTQIR Z Roal[`af_ [YhYZadalq mh lg 75A Z Rap \a^^]j]fl [gflY[l YjjYf_]e]flk Z Tf]f[dgk]\ Yf\ hdYkla[ k]Yd]\ lqh]k YnYadYZd] Z QgHR - EKU [gehdaYfl @VPKGFL /PPLKGFSKONR C]fljYd \ggj dg[c1 Ogo]j \ggjk - oaf\gok1 Ka_`laf_1 ^dYk`da_`l - af\a[Ylgj dYeh [gfljgd1 Ifkljme]fl [gfljgd1

lm 539

Abstract: lm 538 n
Contextual Info: E6;:FK D:?6K =;64 /D:?6K I>F= ;BD8>7?K <G>9:9 8BAF68FE0 ;PMZ[XPY + Kmdla [gflY[l YjjYf_]e]flk? 7 Fgje C .7X lqh]/1 6LM06LC .HD6 lqh]/1 6LM06LC .HD7 lqh]/ + Fgj[aZdq _ma\]\ [gflY[lk Y[[gj\af_ lg EL:575: + =A koal[`af_ [YhYZadalq + Ha_` afkmdYlagf [YhYZadalq .637 4 :5uk/?65cT kmj_] ngdlY_]

PJ27

Abstract: hfk pj27 nba1 PJ26 HQM695561 lm 538 n
Contextual Info: ><@K GI8B?C?7HIF; 7IHDBDH?J; F;A7L <QN\]ZQ[ * Ga_` [mjj]fl [gflY[l [YhY[alq .BYjjqaf_ [mjj]fl? 8:@465eaf 7:@46`/ * Hehjgn]\ `]Yl j]kaklYf[] * Ga_` j]kaklYf[] lg naZjYlagf Yf\ k`g[c H_YSONU 7YYUSON\SXW[ * P]^dgo kgd\]jaf_ n]jkagf YnYadYZd] B]fljYd \ggj dg[c1 Ngo]j \ggjk - oaf\gok1 Rmjfaf_ dYeh [gfljgd1

Contextual Info: 20}*z{ :,0/;? 9/4,? 57.<4/ 0C@MNKCL Fad] Mg3? M=6859:87=;565 Sqha[Yd Yhhda[Ylagf? Ee]j_]f[q klgh Zmllgf1 RY^]lq \ggj V Q]\mf\Yfl \]ka_f g^ [aj[mal1 kY^]lq ^mf[lagf [Yf kladd ogjc Y_Yafkl kge] kaf_d] [gehgf]fl ^Ymdl V Val` k]d^2[`][c ^mf[lagf3 S`] koal[`af_ klYlmk g^ afl]jagj

CQ31

Abstract: marking code c41 SMD ic SW-SPST footprint SA1203I TQFP48 TSA1201 TSA1203 TSA1203IF TSA1203IFT cq13
Contextual Info: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER PIN CONNECTIONS top view AVCC OEB CKD VCCBI GNDBE VCCBE D0(LSB) 41 40 39 38 37 D1 AVCC 42 36 D2 35 D3 3 34 D4 INBI 4 33 D5 A GND 5 32 D6 IPOL 6 31 D7 AVCC 7 30 D8 29 D9 INQ 9 28 D10 A GND 10 27 D11(MS B )

Contextual Info: 5379 .@?;9;?6A2 =28.C 3HERSPHQ Y Roal[`af_ [YhYZadalq mh lg 75A Y Rap \a^^]j]fl [gflY[l YjjYf_]e]flk Y Tf]f[dgk]\ Yf\ hdYkla[ k]Yd]\ lqh]k YnYadYZd] Y QgHR - EKU [gehdaYfl ?UOJFEK .OOKJFERJNMQ C]fljYd \ggj dg[c1 Ogo]j \ggjk - oaf\gok1 Ka_`laf_1 ^dYk`da_`l - af\a[Ylgj dYeh [gfljgd1 Ifkljme]fl [gfljgd1

CQ13

Abstract: CQ31 TQFP48 TSA1201 TSA1204 TSA1204IF TSA1204IFT
Contextual Info: TSA1204 DUAL-CHANNEL, 12-BIT, 20MSPS, 120mW A/D CONVERTER • 0.5Msps to 20Msps sampling frequency ■ Adaptative power consumption: 120mW @ CKD VCCBI GNDBE D1 OEB VCCBE AVCC D0 LSB AVCC 38 37 D2 D3 AGND 3 34 D4 INBI 4 33 D5 AGND 5 32 D6 IPOL 6 31 D7 30 D8

IC 74LS373

Abstract: M74HC373P pin diagram of IC 74LS373 M74HC373 4000B 74LS373 M74HC373DWP M74HC533
Contextual Info: M IT S U B IS H I HIGH S P E E D C M O S M 74H C 3 73P M 74H C 373D W P O C T A L 3 -S T A T E N O N IN V E R T IN G D -T Y P E T R A N S P A R E N T L A T C H DESCRIPTION T h e M 7 4 H C 3 7 3 is a s e m ic o n d u c to r in te g r a te d c irc u it c o n ­